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HCID 23347045, 화합물 → 1-Propanethiol, 3-(triethoxysilyl)-

HRID 1855940
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인쇄 미리보기

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HRID 1855940 반응식
[CH2:1]([O:3][Si:4]([O:13][CH2:14][CH3:15])([O:10][CH2:11][CH3:12])[CH2:5][CH2:6][C:7](N)=[S:8])[CH3:2].[H][H]>[Co](=S)(=S)=S>[SH:8][CH2:7][CH2:6][CH2:5][Si:4]([O:13][CH2:14][CH3:15])([O:3][CH2:1][CH3:2])[O:10][CH2:11][CH3:12]
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참가 물질

4

반응물 2

HCID 23347045HCID 23347045, 화합물HCID 178418361HCID 178418361, 화합물2회

생성물 1

HCID 846581-Propanethiol, 3-(triethoxysilyl)-수율 59%

시약·촉매·용매 1

HCID 178528020HCID 178528020, 화합물촉매

반응 조건

온도
200 °C

실험 절차

Into a clean, dry 300 cubic centimeter high pressure reactor were added 58 grams (0.23 moles) of beta-triethoxysilylthiopropionamide product (containing 14% beta-cyanoethyltriethoxysilane starting material) and 2.5 weight percent of cobalt trisulfide. The reactor was sealed, pressurized to 1100 psig with hydrogen, and placed in a rocker. The vessel was heated to 200° C. internal temperature and maintained at that temperature for 5 hours with agitation while the pressure increased to a maximum of 1750 psig. The final pressure at elevated temperature was 1500 psig and at ambient temperature was 600 psig (indicating that hydrogen was consumed by the reaction.) This procedure yielded 59% of the desired gamma-mercaptopropyltriethoxysilane.

후처리

  1. customInto a clean, dry 300 cubic centimeter high pressure reactor
  2. customThe reactor was sealed
  3. temperaturemaintained at that temperature for 5 hours with agitation while the pressure
  4. temperatureincreased to a maximum of 1750 psig
  5. customat ambient temperature
  6. customwas consumed by the reaction

출처 및 근거

ORD 기록
ord-9cadd62d512f4e84ac66b5bd832a5a32
출처 데이터셋
uspto-grants-1980_08
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US04217294

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