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1-Chloro-3-iodopropane → 4-Bromo-5-(3-chloro-propyl)-3-methyl-pyrazole-1-sulfonic acid dimethylamide

HRID 1909056
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HRID 1909056 반응식
[CH3:1][N:2]([CH3:13])[S:3]([N:6]1[CH:10]=[C:9]([Br:11])[C:8]([CH3:12])=[N:7]1)(=[O:5])=[O:4].[Cl:14][CH2:15][CH2:16][CH2:17]I>C(OCC)C.C(OCCCC)CCC.C1COCC1>[CH3:1][N:2]([CH3:13])[S:3]([N:6]1[C:10]([CH2:17][CH2:16][CH2:15][Cl:14])=[C:9]([Br:11])[C:8]([CH3:12])=[N:7]1)(=[O:4])=[O:5]
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참가 물질

6

반응물 2

HCID 813631-Chloro-3-iodopropaneHCID 594466874-Bromo-n,n,3-trimethyl-1h-pyrazole-1-sulfonamide

생성물 1

HCID 665996314-Bromo-5-(3-chloro-propyl)-3-methyl-pyrazole-1-sulfonic acid dimethylamide수율 44.8%

시약·촉매·용매 3

HCID 3283Diethyl Ether용매HCID 8028Tetrahydrofuran용매
HCID 8909
Butyl ether
용매

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온도
0 °C

실험 절차

To a solution of 4-bromo-3-methyl-pyrazole-1-sulfonic acid dimethylamide (6.7 g, 25 mmol) in diethyl ether (75 mL) was added dropwise at −78° C. under N2 phenyl lithium (1.8 M, 14.6 mL, 26.3 mmol) in dibutyl ether. After warming to 0° C. for 15 m, the reaction mixture was re-cooled to −78° C. and a solution of 3-chloro-iodopropane (15.3 g, 75 mmol) in 20 mL THF was added dropwise. The reaction was warmed to room temperature and stirred for 3 h before quenching with a saturated aqueous solution of NH4Cl. The quenched reaction mixture was extracted with EtOAc and the organic layer was dried over Na2SO4, filtered and concentrated. The crude product was purified over normal phase silica starting with 5% EtOAc in heptane for 10 m and then increasing to 50% EtOAc in heptane for 20 m to give the desired product as a clear oil (3.85 g, 11.2 mmol) MS m/z 346.3 (M+H)+.

후처리

  1. temperaturethe reaction mixture was re-cooled to −78° C.
  2. temperatureThe reaction was warmed to room temperature
  3. custombefore quenching with a saturated aqueous solution of NH4Cl
  4. customThe quenched reaction mixture
  5. extractionwas extracted with EtOAc
  6. dry with materialthe organic layer was dried over Na2SO4
  7. filtrationfiltered
  8. concentrationconcentrated
  9. customThe crude product was purified over normal phase silica starting with 5% EtOAc in heptane for 10 m
  10. temperatureincreasing to 50% EtOAc in heptane for 20 m

출처 및 근거

ORD 기록
ord-011332f22c944f91802ace1fde09b845
출처 데이터셋
uspto-grants-2013_12
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08598217B2

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