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p-Toluenesulfonic acid → HCID 59280191, 화합물

HRID 1913196
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인쇄 미리보기

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HRID 1913196 반응식
CN(C)[CH:3]=[C:4]([C:10]1[CH:11]=[N:12][CH:13]=[CH:14][CH:15]=1)[C:5](OCC)=[O:6].[NH:17]([C:19]1[N:24]=[CH:23][C:22]([C:25]([O:27][C:28]([CH3:31])([CH3:30])[CH3:29])=[O:26])=[CH:21][CH:20]=1)[NH2:18].C1(C)C=CC(S(O)(=O)=O)=CC=1>C(O)C>[O:6]=[C:5]1[N:17]([C:19]2[N:24]=[CH:23][C:22]([C:25]([O:27][C:28]([CH3:31])([CH3:30])[CH3:29])=[O:26])=[CH:21][CH:20]=2)[NH:18][CH:3]=[C:4]1[C:10]1[CH:11]=[N:12][CH:13]=[CH:14][CH:15]=1
참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

참가 물질

5

반응물 3

HCID 6101p-Toluenesulfonic acidHCID 45089857Tert-butyl 6-hydrazinylpyridine-3-carboxylateHCID 687048643-(Dimethylamino)-2-pyridin-3-yl-acrylic acid ethyl ester

생성물 1

HCID 59280191HCID 59280191, 화합물

시약·촉매·용매 1

HCID 702Ethanol용매

반응 조건

온도
0 °C

실험 절차

2.2 g (10.0 mmol) of the compound from Example 2A are initially charged in 50 ml of ethanol. 2.1 g (10.0 mmol) of the compound from Example 15A and 380 mg (2.0 mmol) of p-toluenesulfonic acid are added, and the mixture is stirred under reflux for 16 h. The mixture is then cooled to 0° C., and the solid formed is filtered off and washed once with a little ethanol (batch 1). The mother liquor is concentrated and the residue is triturated with a little ethanol. The solid obtained is filtered off and washed once with ethanol (batch 2). The two solids batches are combined and dried under high vacuum. The solid is then stirred in tert-butyl methyl ether for 30 min, filtered off again and dried under high vacuum.

후처리

  1. temperatureunder reflux for 16 h
  2. customthe solid formed
  3. filtrationis filtered off
  4. washwashed once with a little ethanol (batch 1)
  5. concentrationThe mother liquor is concentrated
  6. customthe residue is triturated with a little ethanol
  7. customThe solid obtained
  8. filtrationis filtered off
  9. washwashed once with ethanol (batch 2)
  10. customdried under high vacuum
  11. stirringThe solid is then stirred in tert-butyl methyl ether for 30 min
  12. filtrationfiltered off again
  13. customdried under high vacuum

출처 및 근거

ORD 기록
ord-9ec73413d77f491b989bf74bd407b94d
출처 데이터셋
uspto-grants-2013_12
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08609698B2

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