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Acetic Acid → Ethyl 1-((4-methoxy-2,3,5-trimethylphenylamino)methyl)-cyclobutanecarboxylate

HRID 2103063
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HRID 2103063 반응식
[CH3:1][O:2][C:3]1[C:9]([CH3:10])=[CH:8][C:6]([NH2:7])=[C:5]([CH3:11])[C:4]=1[CH3:12].[CH:13]([C:15]1([C:19]([O:21][CH2:22][CH3:23])=[O:20])[CH2:18][CH2:17][CH2:16]1)=O.[BH-](OC(C)=O)(OC(C)=O)OC(C)=O.[Na+].C(O)(=O)C>ClCCl.O>[CH3:1][O:2][C:3]1[C:9]([CH3:10])=[CH:8][C:6]([NH:7][CH2:13][C:15]2([C:19]([O:21][CH2:22][CH3:23])=[O:20])[CH2:18][CH2:17][CH2:16]2)=[C:5]([CH3:11])[C:4]=1[CH3:12]
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참가 물질

7

반응물 4

HCID 176Acetic AcidHCID 5049666Sodium triacetoxyborohydrideHCID 12226109Ethyl 1-formylcyclobutanecarboxylateHCID 147002344-Methoxy-2,3,5-trimethylaniline

생성물 1

HCID 86605498Ethyl 1-((4-methoxy-2,3,5-trimethylphenylamino)methyl)-cyclobutanecarboxylate

시약·촉매·용매 2

HCID 962
Water
용매
HCID 6344Dichloromethane용매

실험 절차

To a solution of 4-methoxy-2,3,5-trimethylaniline (400 mg) in dichloromethane (24 mL) was added ethyl 1-formylcyclobutanecarboxylate, prepared as described in Step 1 (377.8 μL). Then NaBH(OAc)3 (771.4 mg) and acetic acid (152.2 μL) were added sequentially. After 3.5 h, water was added. The two layers were separated and the aqueous layer was extracted with more dichloromethane. The combined organic phases were washed with brine, dried and evaporated. Elution of the residue on a silica column (EtOAc/DCM, 0-5%) gave ethyl 1-((4-methoxy-2,3,5-trimethylphenylamino)methyl)-cyclobutanecarboxylate (400 mg) as an oil. 1H-NMR, (300 MHz, CDCl3) δ=6.37 (s,1H), 4.262-3.974 (q, 2H), 3.63 (s, 3H), 3.745-3.474 (br s, 1H), 3.41 (s, 2H), 2.693-2.339 (m, 2H), 2.27 (s, 3H), 2.21, (s, 3H), 2.14-1.818, (m, 4H), 2.02, (s, 3H), 1.333-1.174 (t, 3H) ppm., 13C-NMR, (75 MHz, CDCl3) δ=176.51, 142.52, 129.68, 128.09, 119.78, 110.29, 60.85, 60.37, 50.67, 47.2, 28.43, 16.38, 15.9, 14.3, 12.94, 12.85 ppm.

후처리

  1. customprepared
  2. customThe two layers were separated
  3. extractionthe aqueous layer was extracted with more dichloromethane
  4. washThe combined organic phases were washed with brine
  5. customdried
  6. customevaporated
  7. washElution of the residue on a silica column (EtOAc/DCM, 0-5%)

출처 및 근거

ORD 기록
ord-ca1eeb87eb074c43a2518b04b25edb76
출처 데이터셋
uspto-grants-2009_08
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US07576094B2

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