돌아가기
Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 217564생성일: 2026년 10월 23일

Tetrahydrofuran → Chloropropyldimethylvinylsilane

https://huagongshe.com/ko/reaction/217564

반응식

참여 물질

역할이름HCID투입량
반응물TetrahydrofuranHCID 8028—
반응물Silane, chloro(3-chloropropyl)dimethyl-HCID 82765—
반응물HCID 178461836HCID 178461836—
생성물ChloropropyldimethylvinylsilaneHCID 13171585796%

반응 단계

The above-synthesized 3-chloropropylchlorodimethylsilane (1) (15.6 g, 91.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (85.6 mL, 137 mmol) was slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with aqueous NH4Cl solution and ether, and the organic layer was washed with aqueous saturated NaCl solution. The washed organic solution was dried with anhydrous MgSO4, and then filtered through celite to remove MgSO4. After evaporating the solvent, the resulting residue was purified by column chromatography (n-Hex:EA=10:1, Rf=0.78) to give 14.2 g (96% yield) of pure 3-chloropropyldimethylvinylsilane (2).

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US08197903B2
출처 데이터셋uspto-grants-2012_06
ORD IDord-3c60c145b3eb4100943d26a2597b63e4
출처 메모uspto-grants-2012_06