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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 217565생성일: 2026년 10월 23일

Tetrahydrofuran → 3-Chloropropylmethyldivinylsilane

https://huagongshe.com/ko/reaction/217565

반응식

참여 물질

역할이름HCID투입량
반응물TetrahydrofuranHCID 8028—
반응물3-Chloropropyl dichloromethylsilaneHCID 70700094—
반응물HCID 178461836HCID 178461836—
생성물3-ChloropropylmethyldivinylsilaneHCID 5416509791%

반응 단계

The above-synthesized 3-chloropropyldichloromethylsilane (3) (9 g, 52.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (98 mL, 157 mmol) was then slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with NH4Cl aqueous solution and ether, and washed with saturated NaCl. The washed organic layer was dried with anhydrous MgSO4 and then filtered through celite to remove MgSO4. After evaporating the solvent, and the resulting residue was purified by column chromatography (n-Hexane, Rf=0.36) to give 8.3 g (91% yield) of pure 3-chloropropylmethyldivinylsilane (4).

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US08197903B2
출처 데이터셋uspto-grants-2012_06
ORD IDord-f0c72c307fcf4b5894ed67383c03633c
출처 메모uspto-grants-2012_06