Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
Tetrahydrofuran → 3-Chloropropylmethyldivinylsilane
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|---|---|---|
| 반응물 | Tetrahydrofuran | HCID 8028 | — |
| 반응물 | 3-Chloropropyl dichloromethylsilane | HCID 70700094 | — |
| 반응물 | HCID 178461836 | HCID 178461836 | — |
| 생성물 | 3-Chloropropylmethyldivinylsilane | HCID 54165097 | 91% |
반응 단계
The above-synthesized 3-chloropropyldichloromethylsilane (3) (9 g, 52.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (98 mL, 157 mmol) was then slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with NH4Cl aqueous solution and ether, and washed with saturated NaCl. The washed organic layer was dried with anhydrous MgSO4 and then filtered through celite to remove MgSO4. After evaporating the solvent, and the resulting residue was purified by column chromatography (n-Hexane, Rf=0.36) to give 8.3 g (91% yield) of pure 3-chloropropylmethyldivinylsilane (4).
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 특허 번호 | US08197903B2 |
| 출처 데이터셋 | uspto-grants-2012_06 |
| ORD ID | ord-f0c72c307fcf4b5894ed67383c03633c |
| 출처 메모 | uspto-grants-2012_06 |