홈MCP워크벤치Skills
홈워크벤치알림마이페이지
llms.txt · MCP 가이드개인정보처리방침 · 이용약관 · 지원v1.8.0
  1. 홈
  2. /반응

Acetic Acid → HCID 58094826, 화합물

HRID 2282334
노트
인쇄 미리보기

반응식

HRID 2282334 반응식
C([N:4]1[CH:8]=[CH:7][N:6]=[C:5]1[C:9]1[S:13][C:12]([C:14]2[C:15]3[N:22]=[C:21]([NH2:23])[S:20][C:16]=3[N:17]=[CH:18][N:19]=2)=[CH:11][C:10]=1[C:24]1[CH:29]=[CH:28][C:27]([Cl:30])=[CH:26][C:25]=1[Cl:31])C=C.C(O)(=O)C.C1([SiH3])C=CC=CC=1.C([O-])(O)=O.[Na+]>C1C=CC([P]([Pd]([P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)([P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)[P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)=CC=1.C(Cl)Cl>[Cl:31][C:25]1[CH:26]=[C:27]([Cl:30])[CH:28]=[CH:29][C:24]=1[C:10]1[CH:11]=[C:12]([C:14]2[C:15]3[N:22]=[C:21]([NH2:23])[S:20][C:16]=3[N:17]=[CH:18][N:19]=2)[S:13][C:9]=1[C:5]1[NH:6][CH:7]=[CH:8][N:4]=1
참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

참가 물질

7

반응물 4

HCID 176Acetic AcidHCID 12752PhenylsilaneHCID 516892Sodium BicarbonateHCID 58095014HCID 58095014, 화합물

생성물 1

HCID 58094826HCID 58094826, 화합물수율 59%

시약·촉매·용매 2

HCID 178418397
HCID 178418397, 화합물
촉매
HCID 6344Dichloromethane용매2회

반응 조건

온도
40 °C

실험 절차

A mixture of 7-[5-(1-allyl-1H-imidazol-2-yl)-4-(2,4-dichlorophenyl)-2-thienyl][1,3]thiazolo[5,4-d]pyrimidin-2-amine (28.0 mg, 0.058 mmol), acetic acid (2.0 mL) and DCM (6.0 mL) was degassed with vacuum and then the atmosphere was replaced with nitrogen. To the mixture, were added tetrakis(triphenylphosphine)palladium(0) (7.03 mg, 0.00608 mmol) and phenylsilane (0.10 mL, 0.81 mmol). The resulting mixture was stirred at 40° C. for 30 min. The mixture was allowed to cool to rt followed by adding sat. NaHCO3 and DCM. After being stirred for 10 min, the organic layer was washed with brine, dried over anhydrous sodium sulfate, filtered and concentrated in vacuo. Column chromatography was performed to yield the title compound (15.1 mg, 59%) as a pale yellow solid. LCMS: (AA) ES+445, 447. 1H NMR (400 MHz, d6-DMSO) δ: 11.82 (bs, 1H), 8.64 (s, 1H), 8.39-8.37 (m, 2H), 7.73 (d, J=2.0 Hz, 1H), 7.64-7.42 (m, 3H), 7.12 (bs, 1H), 6.95 (bs, 1H).

후처리

  1. customwas degassed with vacuum
  2. temperatureto cool to rt
  3. stirringAfter being stirred for 10 min
  4. washthe organic layer was washed with brine
  5. dry with materialdried over anhydrous sodium sulfate
  6. filtrationfiltered
  7. concentrationconcentrated in vacuo

출처 및 근거

ORD 기록
ord-f4bb6bd53f8e4b18af526b5cdff512b5
출처 데이터셋
uspto-grants-2015_09
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US09139589B2

반응 노트

불러오는 중…

이 페이지에서참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트