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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 2306508생성일: 2026년 10월 26일

1,3-Dithiane → (3-Buten-1-yl)(1,3-dithian-2-yl)diphenylsilane

https://huagongshe.com/reaction/2306508

반응식

참여 물질

역할이름HCID투입량
반응물1,3-DithianeHCID 10451—
반응물(3-Buten-1-yl)diphenylfluorosilaneHCID 22015847—
반응물ButyllithiumHCID 178418339—
용매TetrahydrofuranHCID 8028—
생성물(3-Buten-1-yl)(1,3-dithian-2-yl)diphenylsilaneHCID 15349849—

반응 단계

To a solution of 1,3-dithiane (6.77 g, 56.3 mmol) in THF (120 mL) at −78° C. was added dropwise over 10 min n-butyllithium (1.6 Min hexane, 50 mmol), and the solution was stirred for 2 h under argon. A solution of 31 (11.1 g, 43.3 mmol) in THF (100 mL) was added, the mixture was stirred for 3 h at −78° C., and overnight at rt. The reaction mixture was quenched with water (100 mL) and the organic layer isolated. The aqueous layer was extracted with two 100-mL portions of ethyl ether. The combined organic extracts were washed with saturated aqueous NaCl, dried over Na2SO4, and concentrated. Flash chromatography over silica gel (1/9 EtOAc:hexane) gave 32 contaminated with 1,3-dithiane. The latter was removed by sublimation (54° C., 8.0 mM Hg). Recrystallization from Et2O provided pure 32 as a colorless solid (14.8 g, 96%): Rf=0.40 (1/49 EtOAc:hexane); mp 474° C.; 1H NMR (300 MHz, CDCl3) δ 7.66 (d, J=7.8 Hz, 4H), 7.43 (m, 6H), 5.90 (m, 1H), 5.02 (dd, J=17.1, 1.7 Hz, 1H), 4.91 (dd, J=10.2, 1.7 Hz, 1H), 4.26 (s, 1H), 2.92 (t, J=11.8 Hz, 2H), 2.71 (m, 2H), 2.19 (m, 2H), 2.07 (m, 2H), 1.37 (m, 2H); 13C NMR (75 MHz, CDCl3) δ 141.1, 135.9, 132.4, 130.2, 128.0, 113.2,32.3, 31.5, 27.5,25.8, 10.5; IR (film) 3068 (m), 3047 (m), 2897 (s), 2840 (m), 1961 (w), 1890 (w), 1826 (w), 1639 (m), 1490 (w), 1429 (s), 1275 (m), 1112 (s), 1003 (m), 911 (s), 785 (m), 744 (s), 703 (s) cm−1; MS (FAB) m/e (rel. intensity) 357 (MH+, 11), 356 (11), 355 (25), 301 (18), 279 (13), 237 (36), 227 (11), 225 (18), 221 (14), 215 (14), 213 (18), 212 (12), 211 (100), 209 (9), 207 (15); HRMS (FAB) calcd for C20H23S2Si: 355.1010 (MH+−2), found: 355.1020. Anal. Calcd for C20H24S2Si: C, 67.36; H, 6.78. Found: C, 67.08; H, 6.78.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US06441212B1
출처 데이터셋uspto-grants-2002_08
ORD IDord-327beb335425451ba2b21f63a74233c3
출처 메모uspto-grants-2002_08