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Phenylboronic Acid → (2-Phenyl-3,4,5-trimethoxyphenyl)diphenylphosphine oxide

HRID 23864
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HRID 23864 반응식
I[C:2]1[C:7]([O:8][CH3:9])=[C:6]([O:10][CH3:11])[C:5]([O:12][CH3:13])=[CH:4][C:3]=1[P:14](=[O:27])([C:21]1[CH:26]=[CH:25][CH:24]=[CH:23][CH:22]=1)[C:15]1[CH:20]=[CH:19][CH:18]=[CH:17][CH:16]=1.[C:28]1(B(O)O)[CH:33]=[CH:32][CH:31]=[CH:30][CH:29]=1>C1C=CC([P]([Pd]([P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)([P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)[P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)=CC=1>[C:28]1([C:2]2[C:7]([O:8][CH3:9])=[C:6]([O:10][CH3:11])[C:5]([O:12][CH3:13])=[CH:4][C:3]=2[P:14](=[O:27])([C:21]2[CH:26]=[CH:25][CH:24]=[CH:23][CH:22]=2)[C:15]2[CH:20]=[CH:19][CH:18]=[CH:17][CH:16]=2)[CH:33]=[CH:32][CH:31]=[CH:30][CH:29]=1
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

4

반응물 2

HCID 66827Phenylboronic AcidHCID 14906789(2-Iodo-3,4,5-trimethoxyphenyl)diphenylphosphine oxide

생성물 1

HCID 12996245(2-Phenyl-3,4,5-trimethoxyphenyl)diphenylphosphine oxide수율 98%

시약·촉매·용매 1

HCID 178418397HCID 178418397, 화합물촉매

실험 절차

To a 2 liter Schlenk flask was added (2-iodo-3,4,5-trimethoxyphenyl) diphenylphosphine oxide 21 (30 g, 61 mmol), phenylboronic acid (11.1 g, 91 mmol), and degassed THF (800 ml). A solution of degassed saturated K2CO3 (400 ml) was added afterwards. The whole mixture was degassed with nitrogen for an additional 10 min. Then, Pd(PPh3)4 (1.22 mmol, 1.4 g) was added in the solution through one portion. The mixture was stirred at reflux under nitrogen for 24 hrs. In situ 31PNMR showed that the reaction was complete. The reaction mixture was concentrated under reduced pressure to remove THF and 400 ml of CH2Cl2 was then added. The CH2Cl2 layer was washed with water (200 ml) and brine (200 ml), dried over Na2SO4, and evaporated. The solid residue was recrystallized from EtOAc (100 ml) to give off-white product 22 (23 g). The mother liquid was passed though a silica gel column to give another 4 g of product 22. The total yield was 98%.

후처리

  1. customdegassed THF (800 ml)
  2. additionA solution of degassed saturated K2CO3 (400 ml) was added afterwards
  3. customThe whole mixture was degassed with nitrogen for an additional 10 min
  4. temperatureat reflux under nitrogen for 24 hrs
  5. concentrationThe reaction mixture was concentrated under reduced pressure
  6. customto remove THF and 400 ml of CH2Cl2
  7. additionwas then added
  8. washThe CH2Cl2 layer was washed with water (200 ml) and brine (200 ml)
  9. dry with materialdried over Na2SO4
  10. customevaporated
  11. customThe solid residue was recrystallized from EtOAc (100 ml)

출처 및 근거

ORD 기록
ord-d0ee01d0729c4903be151f6d627b25e5
출처 데이터셋
uspto-grants-2005_02
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06855657B2

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