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Tetrahydrofuran → 2-(3,4-Dichlorophenyl)-4-(t-butyldimethylsilyloxy)butyronitrile

HRID 323250
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HRID 323250 반응식
[Cl:1][C:2]1[CH:3]=[C:4]([CH2:9][C:10]#[N:11])[CH:5]=[CH:6][C:7]=1[Cl:8].O1CCCC1.C[Si]([N-][Si](C)(C)C)(C)C.[Li+].[Si:27]([O:34][CH2:35][CH2:36]Br)([C:30]([CH3:33])([CH3:32])[CH3:31])([CH3:29])[CH3:28]>C(OCC)(=O)C.CCCCCC>[Cl:1][C:2]1[CH:3]=[C:4]([CH:9]([CH2:36][CH2:35][O:34][Si:27]([C:30]([CH3:33])([CH3:32])[CH3:31])([CH3:29])[CH3:28])[C:10]#[N:11])[CH:5]=[CH:6][C:7]=1[Cl:8]
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

6

반응물 4

HCID 8028TetrahydrofuranHCID 76690(3,4-Dichlorophenyl)acetonitrileHCID 2733832Lithium HexamethyldisilazideHCID 3608067(2-Bromoethoxy)-tert-butyldimethylsilane2회

생성물 1

HCID 184647992-(3,4-Dichlorophenyl)-4-(t-butyldimethylsilyloxy)butyronitrile

시약·촉매·용매 1

HCID 21226206
Ethyl acetate hexane
용매

실험 절차

Combine 3,4-dichlorophenylacetonitrile (10 g, 53.8 mmol) and anhydrous tetrahydrofuran (50 mL). Cool in a dry-ice/acetone bath. Add dropwise a solution of lithium bis(trimethylsilyl)amide (64.5 mL, 1 M in THF, 64.5 mmol). Add dropwise, 2-(t-butyldimethylsilyloxy)-1-bromoethane (15.43 g, 64.5 mmol). When the addition of 2-(t-butyldimethylsilyloxy)-1-bromoethane is complete, warm the reaction mixture to ambient temperature. After 12 hours, partition the reaction mixture between ethyl acetate and water. Extract the aqueous layer twice with ethyl acetate. Combine the organic layers and extract with 1 M hydrochloric acid solution, dry over Na2SO4, filter, and concentrate in vacuo to obtain a residue. Chromatograph the residue on silica gel eluting with 10% ethyl acetate/hexane to give the title compound: Rf=0.42 (silica gel, 10% ethyl acetate/hexane).

후처리

  1. temperatureCool in a dry-ice/acetone bath
  2. additionAdd dropwise
  3. custompartition the reaction mixture between ethyl acetate and water
  4. extractionExtract the aqueous layer twice with ethyl acetate
  5. extractionextract with 1 M hydrochloric acid solution
  6. dry with materialdry over Na2SO4
  7. filtrationfilter
  8. concentrationconcentrate in vacuo
  9. customto obtain a residue

출처 및 근거

ORD 기록
ord-c971ae9e325f47bc94ecc69fbf68c0ca
출처 데이터셋
uspto-grants-2001_04
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06211199B1

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