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Allyl bromide → HCID 18464852, 화합물

HRID 323303
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HRID 323303 반응식
[Si:1]([O:8][CH2:9][CH2:10][CH:11]([CH2:14][C:15]1[CH:20]=[CH:19][CH:18]=[CH:17][CH:16]=1)[C:12]#[N:13])([C:4]([CH3:7])([CH3:6])[CH3:5])([CH3:3])[CH3:2].O1C[CH2:24][CH2:23][CH2:22]1.C[Si]([N-][Si](C)(C)C)(C)C.[Li+].C(Br)C=C>C(OCC)(=O)C.CCCCCC.O.CN(C)P(N(C)C)(N(C)C)=O>[Si:1]([O:8][CH2:9][CH2:10][C:11]([CH2:24][CH:23]=[CH2:22])([CH2:14][C:15]1[CH:16]=[CH:17][CH:18]=[CH:19][CH:20]=1)[C:12]#[N:13])([C:4]([CH3:7])([CH3:6])[CH3:5])([CH3:3])[CH3:2]
참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

참가 물질

8

반응물 4

HCID 7841Allyl bromideHCID 8028TetrahydrofuranHCID 2733832Lithium hexamethyldisilazaneHCID 184645022-(2-(t-Butyldimethylsilyloxy)ethyl)-3-phenylpropionitrile

생성물 1

HCID 18464852HCID 18464852, 화합물

시약·촉매·용매 3

HCID 962Water용매
HCID 12679
Hexamethylphosphoramide
용매
HCID 21226206Ethyl acetate hexane용매

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온도
-78 °C

실험 절차

Combine 2-(2-(t-butyldimethylsilyloxy)ethyl)-3-phenylpropionitrile (1.32 g,4.55 mmol) and tetrahydrofuran (8 mL). Cool to −78° C. using a dry-ice/acetone bath. Add a solution of lithium bis(trimethylsilyl)amide (9.1 mL, 1 M in THF, 9.1 mmol). After 30 minutes, add hexamethylphosphoramide (0.25 mL) and allyl bromide (1.10 g, 9.1 mmol). Warm slowly to ambient temperature. After 12 hours, add water and separate the layers. Extract the aqueous layer three times with ethyl acetate. Combine the organic layers and extract with aqueous 1 M hydrochloric acid solution. Dry the combined organic layers over Na2SO4, filter, and concentrate in vacuo to obtain a residue. Chromatograph the residue on silica gel eluting with 5% ethyl acetate/hexane to give the title compound: Rf=0.83 (silica gel, 1/4 ethyl acetate/hexane).

후처리

  1. temperatureWarm slowly to ambient temperature
  2. waitAfter 12 hours
  3. customseparate the layers
  4. extractionExtract the aqueous layer three times with ethyl acetate
  5. extractionextract with aqueous 1 M hydrochloric acid solution
  6. dry with materialDry the combined organic layers over Na2SO4
  7. filtrationfilter
  8. concentrationconcentrate in vacuo
  9. customto obtain a residue

출처 및 근거

ORD 기록
ord-e021e76fc36f4edb9f32329fb406b18e
출처 데이터셋
uspto-grants-2001_04
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06211199B1

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