Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
Tris(2-methoxyethoxy)vinylsilane → Tetraethoxysilane
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|---|---|---|
| 반응물 | Tris(2-methoxyethoxy)vinylsilane | HCID 14025 | — |
| 반응물 | Methyltrimethoxysilane | HCID 14456 | — |
| 반응물 | Tetrapropoxysilane | HCID 69627 | — |
| 반응물 | Tetraisopropoxysilane | HCID 74813 | — |
| 반응물 | Tetra(methoxyethoxy)silane | HCID 75087 | — |
| 반응물 | Vinyltrimethoxysilane | HCID 76004 | — |
| 반응물 | Silane, (chloromethyl)triethoxy- | HCID 84858 | — |
| 반응물 | 2,5,7,10-Tetraoxa-6-silaundecane, 6-(2-methoxyethoxy)-6-methyl- | HCID 87392 | — |
| 생성물 | Tetraethoxysilane | HCID 6517 | — |
반응 단계
Si(O-n-C3H7)4; Si(O—isoC3H7)4; Si(OC2H4OCH3)4; CH3Si(OCH3)3; CH2═CHSi(OCH3)3; CH3Si(OC2H4OCH3)3; ClCH2Si(OC2H5)3; CH2═CHSi(OC2H4OCH3)3.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 특허 번호 | US06747079B2 |
| 출처 데이터셋 | uspto-grants-2004_06 |
| ORD ID | ord-6b41455068514db7bd1f8f6d1bbc4e5f |
| 출처 메모 | uspto-grants-2004_06 |