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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 366986생성일: 2026년 10월 24일

Silicon carbide → Methane

https://huagongshe.com/ko/reaction/366986

반응식

참여 물질

역할이름HCID투입량
반응물Silicon carbideHCID 9863—
반응물Trisilicon tetranitrideHCID 3084099—
촉매Yttrium oxideHCID 159374—
용매EthanolHCID 702—
생성물MethaneHCID 297—
생성물Silicon carbideHCID 9863—
생성물Trisilicon tetranitrideHCID 3084099—

반응 단계

644 g of a silicon nitride powder (SN-E10 manufactured by Ube Industries, Ltd.; average particle size: 0.3 μm), 276 g of a silicon carbide (beta random ultrafine grade manufactured by Ibiden Co., Ltd.; average particle size: 0.27 μm), 80 g of an yttrium oxide powder (manufactured by Nippon Yttrium Co., Ltd.; average particle size: 1.4 μm) and 1000 g of ethanol as the dispersion medium were blended under pulverizing in a ball mill for 18 hours using 800 g of silicon nitride balls as a tumbling media. The resultant mixture was dried to obtain a starting ceramic powder mixture having a BET specific surface area of 12.1 m2 /g. The above amounts, 644 g of silicon nitride and 276 g of silicon carbide, correspond to theoretical amounts of silicon nitride and silicon carbide formed from 578.6 g of silicon and 82.9 g of carbon black used in Example 1.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US06133180
출처 데이터셋uspto-grants-2000_10
ORD IDord-32798f81733e4199a14a2cd19bf989ae
출처 메모uspto-grants-2000_10