돌아가기
Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 370311생성일: 2026년 10월 26일

Chlorotrimethylsilane → N-allyl-3-trimethylsilylpropiolic amide

https://huagongshe.com/reaction/370311

반응식

참여 물질

역할이름HCID투입량
반응물ChlorotrimethylsilaneHCID 6397—
반응물DiethoxymethaneHCID 10024—
반응물Allyl isocyanateHCID 15123—
반응물Lithium diisopropylamideHCID 2724682—
반응물ButyllithiumHCID 178418339—
용매TetrahydrofuranHCID 8028—
용매tert-Butyl methyl etherHCID 15413—
생성물N-allyl-3-trimethylsilylpropiolic amideHCID 11217610—

반응 조건

온도0 °C

반응 단계

Preferred solvents include ethereals such as THF, diethoxymethane and t-butylmethyl ether. At about 0° C., a strong base is added dropwise over a period of about 15 minutes. Examples of strong bases are n-butyl lithium and lithium diisopropyl amide. While still maintaining the temperature near 0° C., a solution of allyl isocyanate in solvent is added dropwise over about 15 minutes. This is followed by the dropwise addition of trimethylsilyl chloride. After holding the reaction mixture at about 0 to about 10° C. for about 3 hours, the reaction is quenched with aqueous ammonium chloride and extracted with dichloromethane. The solvent is evaporated to yield the product, N-allyl-3-trimethylsilylpropiolic amide. ##STR8## wherein TMS is trimethylsilyl, the solvents are methylene chloride or DCE (1,2-dichloroethane), and the acid catalysts are aluminum chloride (AlCl3), ferric chloride (FeCl3) or methanesulfonic acid (MeSO3).

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US06140511
출처 데이터셋uspto-grants-2000_10
ORD IDord-767ac93444074d5292a52bfc631b232a
출처 메모uspto-grants-2000_10