THF tetrahydrofurane → DMF dimethylformamide

HRID 379002

반응식

HRID 379002 반응식
C1[CH2:5][O:4]CC1.O1CCCC1.COCCOC.C(COC)OC.[Li+].C[CH:25]([N-:27][CH:28](C)C)C.[CH:31]([N-:34][CH:35](C)C)(C)C.[Li+].[Li]CCCC.C([Li])CCC>C(Cl)Cl.ClCCl.CCOCC.C(OCC)C.CCOC(C)=O.C(OCC)(=O)C>[CH3:25][N:27]([CH:5]=[O:4])[CH3:28].[CH3:31][N:34]([CH3:35])[CH:5]=[O:4]

참가 물질

8

반응물 4

HCID 22180045THF tetrahydrofuraneHCID 22508344HCID 22508344, 화합물HCID 86757460LDA lithium diisopropylamideHCID 178506870HCID 178506870, 화합물

생성물 1

HCID 17824068DMF dimethylformamide

시약·촉매·용매 3

HCID 21910879Et2O diethylether용매HCID 21925356DCM Dichloromethane용매HCID 23514209EtOAc EtOAc용매

실험 절차

THF—tetrahydrofuran; DME—dimethoxyethane; EtOAc—ethyl acetate; Et2O—diethylether; RT—room temperature; LDA—lithium diisopropylamide; CH2Cl2—dichloro-methane; tic—thin layer chromatography; BuLi—butyllithium

후처리

  1. customRT—room temperature

출처 및 근거

ORD 기록
ord-259923fed0f244e6852dbf2247aaf447
출처 데이터셋
uspto-grants-2001_10
특허 번호
US06297264B1

연결된 노트

불러오는 중…