반응식
C([O:7][CH2:8][C@H:9]([C@@H:11]1[C@:19]2([CH3:20])[C@H:14]([C@@H:15]([O:21][Si:22]([C:25]([CH3:28])([CH3:27])[CH3:26])([CH3:24])[CH3:23])[CH2:16][CH2:17][CH2:18]2)[CH2:13][CH2:12]1)[CH3:10])(=O)C(C)(C)C.[H-].[Al+3].[Li+].[H-].[H-].[H-]>CCOCC>[Si:22]([O:21][C@H:15]1[CH2:16][CH2:17][CH2:18][C@@:19]2([CH3:20])[C@H:14]1[CH2:13][CH2:12][C@@H:11]2[C@H:9]([CH3:10])[CH2:8][OH:7])([C:25]([CH3:28])([CH3:27])[CH3:26])([CH3:24])[CH3:23]참가 물질
반응 조건
- 온도
- -30 °C
실험 절차
The compound of Example 10D (6.45 g, 16 mmol) was dissolved in 30 mL of ether and cooled to −30° C.; 35 mL of a 1 N solution of lithium aluminum hydride in ether was added at a rate so as to maintain a constant temperature and a modest rate of gas evolution. The mixture was stirred at −30° C. for 10 minutes, and then it was warmed to 0° C. for 1 hour. The reaction was quenched by the careful addition of ethyl acetate (Caution! Vigorous gas evolution) and stirred for 10 minutes, then quenched with a solution of Rochelle's salt. The resultant mixture was partitioned between ethyl acetate and water; the organic phase was washed with brine and dried over Na2SO4. The solvents were removed in vacuo, and the residue was purified by chromatography on an Analogix Intelliflash 280™, eluting with a gradient of 5% to 30% ethyl acetate in hexanes.
후처리
- temperatureto maintain a constant temperature
- temperatureit was warmed to 0° C. for 1 hour
- customThe reaction was quenched by the careful addition of ethyl acetate (Caution! Vigorous gas evolution)
- stirringstirred for 10 minutes
- customquenched with a solution of Rochelle's salt
- customThe resultant mixture was partitioned between ethyl acetate and water
- washthe organic phase was washed with brine
- dry with materialdried over Na2SO4
- customThe solvents were removed in vacuo
- customthe residue was purified by chromatography on an Analogix Intelliflash 280™
- washeluting with a gradient of 5% to 30% ethyl acetate in hexanes
출처 및 근거
- ORD 기록
- ord-145e01aa6f0d430e94077d7accf22106
- 출처 데이터셋
- uspto-grants-2013_02
- 특허 번호
- US08377913B2
연결된 노트
불러오는 중…