Sodium Azide → 3-Azidopropylmethyldiethoxysilane

반응식

Cl[CH2:2][CH2:3][CH2:4][Si:5]([CH3:12])([O:9][CH2:10][CH3:11])[O:6][CH2:7][CH3:8].[N-:13]=[N+:14]=[N-:15].[Na+]>>[N:13]([CH2:2][CH2:3][CH2:4][Si:5]([CH3:12])([O:9][CH2:10][CH3:11])[O:6][CH2:7][CH3:8])=[N+:14]=[N-:15]

참가 물질

반응물 2

HCID 33557Sodium Azide

HCID 83536(3-Chloropropyl)diethoxymethylsilane

생성물 1

HCID 536631743-Azidopropylmethyldiethoxysilane

반응 조건

온도: 140 °C

실험 절차

1.0 mole of 3-chloropropylmethyldiethoxysilane and 1.1 moles of sodium azide were heated in the presence of 5 mole percent of the catalyst described in Example 1 (a) for three hours under stirring at 140° C. After the distillation under reduced pressure there was obtained the 3-azidopropylmethyldiethoxysilane in a yield of 94 weight percent.

후처리

distillationAfter the distillation under reduced pressure

출처 및 근거

ORD 기록: ord-0ab77480438e43218bcc3c5cba3b3347
출처 데이터셋: uspto-grants-1983_08
DOI: 10.6084/m9.figshare.5104873.v1
특허 번호: US04401598

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