3-t-Butyldimethylsiloxy-1-iodo-trans-1-octene → HCID 178506904, 화합물

HRID 436533노트

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HRID 436533 반응식
[O:1]([CH:9]([CH2:13][CH2:14][CH2:15][CH2:16][CH3:17])/[CH:10]=[CH:11]/I)[Si:2]([C:5]([CH3:8])([CH3:7])[CH3:6])([CH3:4])[CH3:3].C([Li:22])CCC>CCCCCC>[O:1]([CH:9]([CH2:13][CH2:14][CH2:15][CH2:16][CH3:17])/[CH:10]=[CH:11]/[Li:22])[Si:2]([C:5]([CH3:8])([CH3:7])[CH3:6])([CH3:4])[CH3:3]

참가 물질

4

반응물 2

HCID 109485973-t-Butyldimethylsiloxy-1-iodo-trans-1-octeneHCID 178418339Butyllithium

생성물 1

HCID 178506904HCID 178506904, 화합물

시약·촉매·용매 1

HCID 8058Hexane용매3회

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온도
-78 °C

실험 절차

On the other hand, 736 mg (2 mmol) of 3-t-butyldimethylsiloxy-1-iodo-trans-1-octene was added to 2 ml. of anhydrous hexane, and 1.4 ml. (2 mmol) of a 1.4 M hexane solution of n-butyllithium was added. The mixture was stirred at -78° C for 30 minutes in an atmosphere of nitrogen to afford an anhydrous hexane solution of 3-t-butyldimethylsiloxy-1-lithio-trans-1-octene. The resulting solution was added dropwise to the anhydrous diethyl ether solution of copper pentylide obtained previously, and the mixture was stirred at -78° C for 30 minutes to afford a solution of an organic copper lithium compound of the following formula ##STR19##

출처 및 근거

ORD 기록
ord-9bc81be2f38c49c0bdd0c3a5d780f123
출처 데이터셋
uspto-grants-1977_02
특허 번호
US04009196

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