홈MCP워크벤치Skills
홈워크벤치알림마이페이지
llms.txt · MCP 가이드개인정보처리방침 · 이용약관 · 지원v1.8.0
  1. 홈
  2. /반응

4-{[(1R,3S,4S)-3-([tert-butyl(dimethyl)silyl]oxy}-4-({[tert-butyl(dimethyl)silyl]oxy)methyl)cyclopentyl]oxy}-3-nitropyridin-2-amine → 4-{[(1R,3S,4S)-3-{[tert-butyl(dimethyl)silyl]oxy}-4-({[tert-butyl(dimethyl)silyl]-oxy}methyl)cyclopentyl]oxy}pyridine-2,3-diamine

HRID 447665
노트
인쇄 미리보기

반응식

HRID 447665 반응식
[Si:1]([O:8][C@@H:9]1[C@H:13]([CH2:14][O:15][Si:16]([C:19]([CH3:22])([CH3:21])[CH3:20])([CH3:18])[CH3:17])[CH2:12][C@@H:11]([O:23][C:24]2[CH:29]=[CH:28][N:27]=[C:26]([NH2:30])[C:25]=2[N+:31]([O-])=O)[CH2:10]1)([C:4]([CH3:7])([CH3:6])[CH3:5])([CH3:3])[CH3:2]>C(Cl)Cl.C(O)(=O)C.[Zn]>[Si:1]([O:8][C@@H:9]1[C@H:13]([CH2:14][O:15][Si:16]([C:19]([CH3:22])([CH3:21])[CH3:20])([CH3:18])[CH3:17])[CH2:12][C@@H:11]([O:23][C:24]2[CH:29]=[CH:28][N:27]=[C:26]([NH2:30])[C:25]=2[NH2:31])[CH2:10]1)([C:4]([CH3:5])([CH3:6])[CH3:7])([CH3:3])[CH3:2]
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

5

반응물 1

HCID 667981204-{[(1R,3S,4S)-3-([tert-butyl(dimethyl)silyl]oxy}-4-({[tert-butyl(dimethyl)silyl]oxy)methyl)cyclopentyl]oxy}-3-nitropyridin-2-amine

생성물 1

HCID 667979604-{[(1R,3S,4S)-3-{[tert-butyl(dimethyl)silyl]oxy}-4-({[tert-butyl(dimethyl)silyl]-oxy}methyl)cyclopentyl]oxy}pyridine-2,3-diamine수율 88%

시약·촉매·용매 3

HCID 23994Zinc촉매HCID 176Acetic Acid용매
HCID 6344
Dichloromethane
용매

실험 절차

To a solution of 4-{[(1R,3S,4S)-3-{[tert-butyl(dimethyl)silyl]oxy}-4-({[tert-butyl(dimethyl)silyl]oxy}methyl)cyclopentyl]oxy}-3-nitropyridin-2-amine (0.361 g, 0.000725 mol) in CH2Cl2 (6.00 mL) and acetic acid (3.00 mL) was added zinc (0.474 g, 0.00725 mol) and the mixture was stirred for 30 min. The suspension was filtered and the filtrate was concentrated. The residue was dissolved in 50 ml EtOAc and 3 ml Et3N then washed with water (2×10 mL). The organic layer was dried (MgSO4) and concentrated to afford the crude product (0.297 g, 88%).

후처리

  1. filtrationThe suspension was filtered
  2. concentrationthe filtrate was concentrated
  3. dissolutionThe residue was dissolved in 50 ml EtOAc
  4. wash3 ml Et3N then washed with water (2×10 mL)
  5. dry with materialThe organic layer was dried (MgSO4)
  6. concentrationconcentrated

출처 및 근거

ORD 기록
ord-f5d13aa3989a4a068db2e409c1d14e04
출처 데이터셋
uspto-grants-2013_07
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08481550B2

반응 노트

불러오는 중…

이 페이지에서참가 물질실험 절차후처리출처 및 근거반응 노트