Tetraethoxysilane → Tmos gaps

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Substrate film casting procedure—HEC and TEOS and GAPS HEC (1.25 g) was completely dissolved in deionized water (250 mL) and stirred vigorously for about 16 hours to provide a 0.5 wt % solution. Then 0.875 mL tetramethylorthosilicate (TMOS) and 0.125 mL γ-aminopropyltriethoxysilane (GAPS) were added to the 50 g of the HEC solution with stirring to provide a 1:3.5:0.5 (w:v:v) HEC/TMOS/GAPS solution. After approximately 10 minutes, the combined HEC/silica solution was added to a well plate as above. The solution was allowed to evaporate at room temperature 16 hours with lid on, followed by 75° C. for 8 hours, until dry. The plates were sterilized by UV irradiation (1 hr @ 366 nm).

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