Chloromethyl Methyl Ether → HCID 66618049, 화합물

HRID 559464노트

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HRID 559464 반응식
[CH:1]1([CH2:4][NH:5][C:6](=[O:12])[O:7][C:8]([CH3:11])([CH3:10])[CH3:9])[CH2:3][CH2:2]1.[Li]CCCC.Cl[CH2:19][O:20][CH3:21]>C1COCC1>[CH:1]1([CH2:4][N:5]([CH2:19][O:20][CH3:21])[C:6](=[O:12])[O:7][C:8]([CH3:9])([CH3:11])[CH3:10])[CH2:2][CH2:3]1

참가 물질

5

반응물 3

HCID 7864Chloromethyl Methyl EtherHCID 49757579tert-butyl N-(cyclopropylmethyl)carbamateHCID 178418339Butyllithium

생성물 1

HCID 66618049HCID 66618049, 화합물수율 91%

시약·촉매·용매 1

HCID 8028Tetrahydrofuran용매

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온도
-78 °C

실험 절차

Tert-butyl cyclopropylmethylcarbamate (11.2 g, 65.4 mmol) was dissolved into THF (60 mL) and set to stir at −78° C. BuLi (2.5M, 28.8 mL) was then added portionwise over 10 minutes. The reaction was allowed to stir while warming to −20° C. for 10 minutes, and continued stirring at that temperature for another 10 minutes. The reaction was then recooled to −78° C. at which point chloro(methoxy)methane (5.79 g, 72.0 mmol) was added via syringe. The reaction was then allowed to stir overnight with warming. The reaction was then quenched with 1 N HCl and the organic layer separated. The aqueous layer was then extracted with DCM (2×), and the combined organic portions were dried with MgSO4, filtered and concentrated. The crude material was purified by passing through a silica plug eluting 10:1 Hex/EtOAc to give tert-butyl cyclopropylmethyl(methoxymethyl)carbamate (12.8 g, 91%) as a clear liquid.

후처리

  1. stirringto stir
  2. temperaturewhile warming to −20° C. for 10 minutes
  3. stirringcontinued stirring at that temperature for another 10 minutes
  4. additionwas added via syringe
  5. stirringto stir overnight
  6. temperaturewith warming
  7. customThe reaction was then quenched with 1 N HCl
  8. customthe organic layer separated
  9. extractionThe aqueous layer was then extracted with DCM (2×)
  10. dry with materialthe combined organic portions were dried with MgSO4
  11. filtrationfiltered
  12. concentrationconcentrated
  13. customThe crude material was purified
  14. washeluting 10:1 Hex/EtOAc

출처 및 근거

ORD 기록
ord-53acbb7d1c054bf8bcb6668eb20b9046
출처 데이터셋
uspto-grants-2011_11
특허 번호
US08063050B2

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