Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
Chlorotrimethylsilane → HCID 54681392, 화합물
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|---|---|---|
| 반응물 | Chlorotrimethylsilane | HCID 6397 | — |
| 반응물 | 3'-Chloro-4'-methoxyacetophenone | HCID 520857 | — |
| 반응물 | Lithium Hexamethyldisilazide | HCID 2733832 | — |
| 반응물 | [(Phenylmethyl)thio]propanedioic acid | HCID 19596125 | — |
| 용매 | Tetrahydrofuran | HCID 8028 | — |
| 생성물 | HCID 54681392 | HCID 54681392 | — |
반응 단계
The title compound was prepared by Method A using 3'-chloro-4'-methoxy acetophenone (0.979 g, 5.31 mmol), lithium bis(trimethylsilyl)amide (0.977 g, 5.84 mmol), chlorotrimethylsilane (0.741 mL, 5.84 mmol), THF (58 mL), and diethyl ester of [(phenylmethyl)thio]propanedioic acid (1.00 g, 3.54 mmol). m.p. dec. 171° C.; 1H NMR (400 MHz, DMSO-d6) δ3.93 (s, 3 H), 3.99 (s, 2 H), 6.68 (s, 1 H), 7.32 (m, 6 H), 7.77 (d, 1 H), 7.83 (d, 1 H).
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 특허 번호 | US06005103 |
| 출처 데이터셋 | uspto-grants-1999_12 |
| ORD ID | ord-db0479f447f3475791bde7cd4530f221 |
| 출처 메모 | uspto-grants-1999_12 |