참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|
| 반응물 | Acetylene | HCID 6326 | — |
| 반응물 | Vinyltris(dimethylamino)silane | HCID 13548100 | — |
| 생성물 | 1-Ethyl-N,N,N',N',N'',N''-hexamethylsilanetriamine | HCID 207257 | 85% |
반응 단계
The reaction was carried out as in Example 3; however, the acetylene pressure was increased to 150 psig and the reaction temperature was maintained at 240° C. Vinyltris(dimethylamino)silane was the single major product at a yield of 85% theoretical. Ethyltris(dimethylamino)silane and 1,2-bis(trisdimethylamino)silylethane were also formed, each in approximately a 2 to 3% yield. Vinyltris(dimethylamino)silane was also formed in approximately 10% yield.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|
| 특허 번호 | US04558146 |
|---|
| 출처 데이터셋 | uspto-grants-1985_12 |
|---|
| ORD ID | ord-51e82ae9882b46439ba9ab11a5f08b0c |
|---|
| 출처 메모 | uspto-grants-1985_12 |
|---|
