Butyl-2,3-epoxypropyl ether → Bis-alpha-naphthyl-(2-hydroxy-4-[3-n-butoxy-2-hydroxy-propoxy]-phenyl)-triazine

HRID 8343

반응식

HRID 8343 반응식
C([CH:5]1[O:17][CH:6]1[CH2:7][O:8][CH2:9][CH:10]1O[CH:11]1[CH2:12]CCC)CCC.[C:18]1([C:28]2[N:33]=[N:32][N:31]=[C:30]([C:34]3[CH:39]=[CH:38][C:37]([OH:40])=[CH:36][C:35]=3[OH:41])[C:29]=2[C:42]2[C:51]3[C:46](=[CH:47][CH:48]=[CH:49][CH:50]=3)[CH:45]=[CH:44][CH:43]=2)[C:27]2[C:22](=[CH:23][CH:24]=[CH:25][CH:26]=2)[CH:21]=[CH:20][CH:19]=1>[Br-].C([P+](C1C=CC=CC=1)(C1C=CC=CC=1)C1C=CC=CC=1)C.C1(C)C(C)=CC=CC=1>[C:18]1([C:28]2[N:33]=[N:32][N:31]=[C:30]([C:34]3[CH:39]=[CH:38][C:37]([O:40][CH2:5][CH:6]([OH:17])[CH2:7][O:8][CH2:9][CH2:10][CH2:11][CH3:12])=[CH:36][C:35]=3[OH:41])[C:29]=2[C:42]2[C:51]3[C:46](=[CH:47][CH:48]=[CH:49][CH:50]=3)[CH:45]=[CH:44][CH:43]=2)[C:27]2[C:22](=[CH:23][CH:24]=[CH:25][CH:26]=2)[CH:21]=[CH:20][CH:19]=1

참가 물질

5

반응물 2

HCID 86596549Butyl-2,3-epoxypropyl etherHCID 136338648Bis-alpha-naphthyl-(2,4-dihydroxyphenyl)-triazine

생성물 1

HCID 136338647Bis-alpha-naphthyl-(2-hydroxy-4-[3-n-butoxy-2-hydroxy-propoxy]-phenyl)-triazine

시약·촉매·용매 2

HCID 73727Phosphonium, ethyltriphenyl-, bromide (1:1)촉매HCID 7237O-Xylene용매

반응 조건

온도
25 °C

실험 절차

6.60 g of butyl-2,3-epoxypropyl ether and 0.78 g of ethyl-triphenyl-phosphonium bromide are added to a solution of 20.0 g of the product from Example A6 in 200 ml of xylene. That reaction mixture is heated to boiling for 18 h. 0.5 g of activated carbon is then added to the reaction mixture and the resulting mixture is stirred at 25° C. for 1 h. After filtration of the reaction mixture on Hyflo® (kieselguhr; Fluka 56678), the solvent is removed in vac. Chromatography of the residue on silica gel yields the product of melting point: 118–119° C.

후처리

  1. temperatureThat reaction mixture is heated
  2. addition0.5 g of activated carbon is then added to the reaction mixture
  3. filtrationAfter filtration of the reaction mixture on Hyflo® (kieselguhr; Fluka 56678)
  4. customthe solvent is removed in vac
  5. customChromatography of the residue on silica gel yields the product of melting point: 118–119° C.

출처 및 근거

ORD 기록
ord-47a2ac6edb95468782048df6afee6428
출처 데이터셋
uspto-grants-2006_08
특허 번호
US07087753B2

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