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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 962819생성일: 2026년 10월 26일

1,3-Dithiane → (3-Buten-1-yl)(1,3-dithian-2-yl)diphenylsilane

https://huagongshe.com/reaction/962819

반응식

참여 물질

역할이름HCID투입량
반응물1,3-DithianeHCID 10451—
반응물(3-Buten-1-yl)diphenylfluorosilaneHCID 22015847—
반응물ButyllithiumHCID 178418339—
용매TetrahydrofuranHCID 8028—
생성물(3-Buten-1-yl)(1,3-dithian-2-yl)diphenylsilaneHCID 15349849—

반응 단계

To a solution of 1,3-dithiane (6.77 g, 56.3 mmol) in THF (120 mL) at -78° C. was added dropwise over 10 min n-butyllithium (1.6M in hexane, 50 mmol), and the solution was stirred for 2 h under argon. A solution of 31 (11.1 g, 43.3 mmol) in THF (100 mL) was added, the mixture was stirred for 3 h at -78° C., and overnight at rt. The reaction mixture was quenched with water (100 mL) and the organic layer isolated. The aqueous layer was extracted with two 100-mL portions of ethyl ether. The combined organic extracts were washed with saturated aqueous NaCI, dried over Na2 SO4, and concentrated. Flash chromatography over silica gel (1/9EtOAc:hexane) gave 32 contaminated with 3-dithiane. The latter was removed by sublimation (54° C., 8.0 mm Hg). Recrystallization from Et2O provided pure 32 as a colorless solid (14.8 g, 96%): R.function. =0.40 (1/49 EtOAc:hexane); mp 47°-49° C.; 1H NMR (300 MHz, CDCl3) δ7.66 (d, J=7.8 Hz, 4H), 7.43 (m, 6H), 5.90 (m, 1H), 5.02 (dd, J=17.1, 1.7 Hz, 1H), 4.91 (dd, J=10.2, 1.7 Hz, 1H), 4.26 (s, IH), 2.92 (t, J=11.8 Hz, 2H), 2.71 (m, 2H), 2.19 (m, 2H), 2.07 (m, 2H), 1.37 (m, 2H); 13C NMR (75 MHz, CDCl3) δ141.1, 135.9, 132.4, 130.2, 128.0, 113.2, 32.3, 31.5, 27.5, 25.8, 10.5; IR (film) 3068 (m), 3047 (m), 2897 (s), 2840 (m), 1961 (w), 1890 (w), 1826 (w), 1639 (m), 1490 (w), 1429 (s), 1275 (m), 1112 (s), 1003 (m), 911 (s), 785 (m), 744(s), 703 (s) cm-1 ; MS (FAB) m/e (rel. intensity) 357 (M+, 11), 356 (11), 355 (25), 301 (18), 279 (13), 237 (36), 227 (11), 225 (18), 221 (14), 215 (14), 213 (18), 212 (12), 211 (100), 209 (9), 207 (15); HRMS (FAB) calcd for C20H23S2 Si: 355.1010 (MH+ -2), found: 355.1020. Anal. Calcd for C20 H24S2Si: C, 67.36; H, 6.78. Found: C, 67.08; H, 6.78.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US05760019
출처 데이터셋uspto-grants-1998_06
ORD IDord-da62a93a9668413a96db0b7645487f15
출처 메모uspto-grants-1998_06