Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
Silica → Ammonia
참여 물질
| 역할 | 이름 | HCID | 투입량 |
|---|---|---|---|
| 반응물 | Silica | HCID 24261 | — |
| 반응물 | Trisilicon tetranitride | HCID 3084099 | — |
| 생성물 | Ammonia | HCID 222 | — |
| 생성물 | Silane | HCID 23953 | — |
| 생성물 | Trisilicon tetranitride | HCID 3084099 | — |
반응 단계
Next, a middle silicon nitride layer 12 is deposited onto the first layer 10 of silicon dioxide previously deposited. Silicon nitride is produced from the reaction of silane (SiH4) with nitrogen and ammonia (NH3). The nitride deposition is performed, for example, in a "pancake style"]reactor. Typically, 3.5 minutes is required to deposit 500 Angstroms of Si3N4 at 800° C.
출처 및 근거
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| 특허 번호 | US04052251 |
| 출처 데이터셋 | uspto-grants-1977_10 |
| ORD ID | ord-6f007f246b7a4bd4a4b23dffc3c83d94 |
| 출처 메모 | uspto-grants-1977_10 |