HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1005624Generated: October 26, 2026
4-Ethenylphenyl acetate → 3-Hydroxyadamantyl methacrylate vinylphenol
https://huagongshe.com/reaction/1005624
Participants
| Role | Name | HCID | Charge |
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| Reactant | 4-Ethenylphenyl acetate | HCID 75821 | — |
| Reactant | 3-Hydroxy-1-methacryloyloxyadamantane | HCID 11856523 | — |
| Product | 3-Hydroxyadamantyl methacrylate vinylphenol | HCID 86588766 | — |
Reaction Steps
3-Hydroxyadamantyl methacrylate and 4-acetoxystyrene were charged at a charge ratio of 2:8 to synthesize a base resin. The resin obtained was treated with an alkali solution to cause soluvolysis of the acetyl group, thereby obtaining a 3-hydroxyadamantyl methacrylate-vinylphenol copolymer (molecular weight: 4,500). To polyvinylphenol produced by Maruzen Sekiyu, 15 wt % of the copolymer obtained was added and the mixture was dissolved in PGMEA (propylene glycol methyl ether acetate). To this solution, 5 wt % of triphenylsulfoium trifluoromethanesulfonate was added and thoroughly dissolved. The thus-obtained resist solution was filtered through a 0.2 μm teflon membrane filter, spin-coated on a silicon substrate subjected to an HMDS treatment, and pre-baked at 110° C. for 60 seconds to form a 0.5 μm-thick resist film. This resist film was exposed by a KrF excimer laser stepper (NA=0.45), baked at 120° C. for 60 seconds, developed with a 2.38% tetramethylammonium hydroxide (TMAH) developer, and rinsed with deionized water. With an exposure amount of 12.0 mJ/cm2, a resolution of 0.25 μmL/S was obtained. In this resist pattern, swelling was not generated.
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| Patent number | US06787288B2 |
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| Source dataset | uspto-grants-2004_09 |
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| ORD ID | ord-64f35c0dbd0c4e7590bde898c82fa844 |
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| Source note | uspto-grants-2004_09 |
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