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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1017166Generated: October 29, 2026

Hafnium chloride (HfCl4) (6CI,8CI); Hafnium chloride; Hafnium tetrachloride; Hafnium(IV) chloride; Hafnium chloride (HfCl4), (T-4)- → HCID 178504164, compound

https://huagongshe.com/reaction/1017166

Reaction equation

Participants

RoleNameHCIDCharge
ReactantHafnium chloride (HfCl4) (6CI,8CI); Hafnium chloride; Hafnium tetrachloride; Hafnium(IV) chloride; Hafnium chloride (HfCl4), (T-4)-HCID 9927068—
Reactant2-(3,5-Bis(trimethylsilyl)phenyl)indeneHCID 22283817—
ReactantButyllithiumHCID 178418339—
SolventDiethyl EtherHCID 3283—
ProductHCID 178504164HCID 17850416456%

Reaction Conditions

Temperature-10 °C

Reaction Steps

2-(3,5-Bis(trimethylsilyl)phenyl)indene (22.3 g, 0.066 mol) and anhydrous diethyl ether (250 mL) were placed in a 1 L three-necked flask under argon. n-Butyllithium (41 mL of a 1.6 M solution in hexanes, 0.066 mol) was added over a thirty minute period at 0° C. The solution was stirred for an additional two hours. Hafnium tetrachloride (10.5 g, 0.033 mol) was added incrementally over a one-hour period. The mixture was then stirred overnight. The ethereal solution was chilled to −10° C. and the solids were collected by filtration. The solids were taken up in 300 mL of dichloromethane and the residual solids were removed by filtration through celite. The celite was washed with an additional 100 mL of dichloromethane and the solvents were evaporated to give 17.3 g of bis(2-(3,5-bis(trimethylsilyl)phenyl)indenyl)hafnium dichloride product (56% yield).

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS06479424B1
Source datasetuspto-grants-2002_11
ORD IDord-b3afda65ad6345498d1d88a4b6051006
Source noteuspto-grants-2002_11