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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1254434Generated: October 27, 2026

N,N,N',N'-Tetramethylethylenediamine → 1-(Tetrahydro-2H-pyran-2-yl)-5-(3,3,3-trifluoroprop-1-yn-1-yl)-1H-indazole

https://huagongshe.com/reaction/1254434

Reaction equation

Participants

RoleNameHCIDCharge
ReactantN,N,N',N'-TetramethylethylenediamineHCID 8037—
Reactant1-Propene, 2-bromo-3,3,3-trifluoro-HCID 272696—
ReactantLithium diisopropylamideHCID 2724682—
Reactant5-Iodo-1-(tetrahydro-2H-pyran-2-yl)-1H-indazoleHCID 66793469—
CatalystZincchlorideHCID 3007855—
CatalystHCID 178418397HCID 178418397—
SolventTetrahydrofuranHCID 8028—
Product1-(Tetrahydro-2H-pyran-2-yl)-5-(3,3,3-trifluoroprop-1-yn-1-yl)-1H-indazoleHCID 6679316333.9%

Reaction Conditions

Temperature80 °C

Reaction Steps

To a solution of LDA (2 M in THF, 3.2 mL, 6.4 mmol) in anhydrous THF (10 mL) was added dropwise 2-bromo-3,3,3-trifluoroprop-1-ene (0.55 g, 3.1 mmol) at −78° C. The resulting mixture was stirred at that temperature for 15 minutes, followed by the addition of ZnCl2 (1 M in ethyl ether, 6.5 mL, 6.5 mmol) and TMEDA (1 mL, 6.5 mmol). The mixture was stirred at −78° C. for further 30 minutes and then 30 minutes at room temperature. 5-Iodo-1-(tetrahydro-2H-pyran-2-yl)-1H-indazole (0.99 g, 3.0 mmol) and Pd(PPh3)4 (0.21 g, 0.18 mmol) were added. The reaction mixture was heated at 80° C. for 6 hours under N2 atmosphere. Upon completion, the reaction mixture was quenched with water (100 mL) and then diluted with ethyl acetate (300 mL). The organic layer was separated, dried over Na2SO4 and concentrated in vacuo. The residue was purified by column chromatography on silica gel (0˜20% EtOAc in petroleum ether) affording the title compound (299 mg). 1H NMR (300 MHz, DMSO-d6): δ 8.28 (s, 1H), 8.24 (s, 1H), 7.87 (d, 1H), 7.68 (dd, 1H), 5.91 (dd, 1H), 3.90-3.86 (m, 1H), 3.79-3.72 (m, 1H), 2.41-2.36 (m, 1H), 2.05-1.96 (m, 2H), 1.76-1.72 (m, 1H), 1.60-1.56 (m, 2H); LCMS: 295 (M+H)+.

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS08455534B2
Source datasetuspto-grants-2013_06
ORD IDord-65ad744fdbc74f94bee83be384250c96
Source noteuspto-grants-2013_06