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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1378887Generated: October 25, 2026

Boron Nitride → Boron boron carbide

https://huagongshe.com/reaction/1378887

Reaction equation

Participants

RoleNameHCIDCharge
ReactantBoron NitrideHCID 66227—
ReactantBoron carbideHCID 123279—
ReactantBoronHCID 5462311—
ProductBoron boron carbideHCID 131720199—
ProductBoron nitride boron carbideHCID 131720200—
ProductBoron boron nitride boron carbideHCID 131720201—

Reaction Steps

It has thus been shown that this invention involves the fabrication of multilayer structures from thin films or coatings of boron, boron nitride, and boron carbide to form multilayer films or coatings of boron/boron carbide, boron nitride/boron carbide, and boron/boron nitride/boron carbide and involves processes which utilizes dc and rf magnetron sputtering, and simply changing the type of sputtering gas. The boron/boron carbide multilayers, are produced in an inert atmosphere, such as argon, helium, neon, krypton, and xenon, with argon being preferred; and the cubic boron nitride/boron carbide multilayers are produced in an alternating reactive and inert atmosphere with reactive gases such as nitrogen, ammonia, ammonia-nitrogen-argon, with nitrogen preferred, or a mixture of nitrogen with argon. The cubic boron nitride/boron carbide multilayers require alternate rf (c-BN) and dc (B4C) magnetron sputtering. The atmosphere may be varied during the processing to produce diffused (blended or graded) layers.

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS05670252
Source datasetuspto-grants-1997_09
ORD IDord-43c7600af66a445f94efe180531a0f2b
Source noteuspto-grants-1997_09