Tetraethoxysilane → HCID 87198141, compound

HRID 1581904Notes

Reaction equation

[O:1]=[O+:2][O-:3].[CH3:4][CH2:5][O:6][Si:7]([O:14][CH2:15][CH3:16])([O:11][CH2:12][CH3:13])[O:8][CH2:9][CH3:10]>>[O:1]=[O+:2][O-:3].[CH3:10][CH2:9][O:8][Si:7]([O:6][CH2:5][CH3:4])([O:11][CH2:12][CH3:13])[O:14][CH2:15][CH3:16]

Participants

Reactant 2

HCID 6517Tetraethoxysilane

HCID 24823Ozone2×

Product 1

HCID 87198141HCID 87198141, compound

Procedure

In the examples shown in FIGS. 13a-16b, the same process parameters were used: a pressure of about 450 Torr, a heater temperature of about 400° C., a helium flow rate of about 3000 sccm, an ozone flow rate of about 5000 sccm, a TEOS flow rate of about 320 mgm, and an ozone concentration of about 12.5 wt. %. This provides an O3/TEOS ratio of about 13:1. The observed deposition rate is about 3000 Å/min on silicon, about 1000 Å/min on LPCVD silicon nitride, and about 1050 Å/min on thermal oxide. The trench depth is about 0.55 μm and two trench widths are used: 0.25 μm (FIGS. 13a-16a) and 1 μm (FIGS. 13b-16b).

Workup

customa heater temperature of about 400° C.

Sources & evidence

ORD record: ord-951d0f6f774c492db3868ebeb02880f7
Source dataset: uspto-grants-2004_05
DOI: 10.6084/m9.figshare.5104873.v1
Patent number: US06733955B1

Reaction notes

Loading…