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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1638229Generated: November 1, 2026

Chlorotrimethylsilane → HCID 18670031, compound

https://huagongshe.com/reaction/1638229

Reaction equation

Participants

RoleNameHCIDCharge
ReactantChlorotrimethylsilaneHCID 6397—
Reactant1H-Indene, (1-methylethylidene)bis-HCID 11780671—
ReactantHCID 69536615HCID 69536615—
ReactantHCID 131721750HCID 131721750—
ReactantButyllithiumHCID 178418339—
SolventDiethyl EtherHCID 3283—
SolventPentaneHCID 8003—
ProductHCID 18670031HCID 18670031—

Reaction Steps

5.45 g (20 mmol) of 2,2-bis(indenyl)propane prepared according to the procedure of example 1 was dissolved in 100 ml of ether. The solution thus obtained was taken to -20° C., and 22 ml of a 2.0 M solution of n-butyl-lithium in pentane was added, thus giving a suspension of dilithium-2,2-bis(indenyl)propane. 8.77 g (30.85 mmol) of dilithium 2,2-bis(indenyl)propane was dissolved in 100 ml of ether, and 10 ml of Me3SiCl (excess) was added at a temperature of -40° C. The resulting mixture was allowed to return to room temperature. The organic phase was then separated off, the solvent removed and the product dried in vacuo. 1H-NMR

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS06043403
Source datasetuspto-grants-2000_03
ORD IDord-09091ab22ab04415b1ec33f0eed8e35b
Source noteuspto-grants-2000_03