HuagongsheHuagongshe Chemistry Print Report · For research reference only
Chlorotrimethylsilane → HCID 18670031, compound
Participants
| Role | Name | HCID | Charge |
|---|---|---|---|
| Reactant | Chlorotrimethylsilane | HCID 6397 | — |
| Reactant | 1H-Indene, (1-methylethylidene)bis- | HCID 11780671 | — |
| Reactant | HCID 69536615 | HCID 69536615 | — |
| Reactant | HCID 131721750 | HCID 131721750 | — |
| Reactant | Butyllithium | HCID 178418339 | — |
| Solvent | Diethyl Ether | HCID 3283 | — |
| Solvent | Pentane | HCID 8003 | — |
| Product | HCID 18670031 | HCID 18670031 | — |
Reaction Steps
5.45 g (20 mmol) of 2,2-bis(indenyl)propane prepared according to the procedure of example 1 was dissolved in 100 ml of ether. The solution thus obtained was taken to -20° C., and 22 ml of a 2.0 M solution of n-butyl-lithium in pentane was added, thus giving a suspension of dilithium-2,2-bis(indenyl)propane. 8.77 g (30.85 mmol) of dilithium 2,2-bis(indenyl)propane was dissolved in 100 ml of ether, and 10 ml of Me3SiCl (excess) was added at a temperature of -40° C. The resulting mixture was allowed to return to room temperature. The organic phase was then separated off, the solvent removed and the product dried in vacuo. 1H-NMR
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| Patent number | US06043403 |
| Source dataset | uspto-grants-2000_03 |
| ORD ID | ord-09091ab22ab04415b1ec33f0eed8e35b |
| Source note | uspto-grants-2000_03 |