HuagongsheHuagongshe Chemistry Print Report · For research reference only
TIN OXIDE (SnO) → Indium oxide tin oxide samarium oxide
Participants
| Role | Name | HCID | Charge |
|---|---|---|---|
| Reactant | TIN OXIDE (SnO) | HCID 88989 | — |
| Reactant | Indium oxide | HCID 150905 | — |
| Reactant | Samarium oxide (Sm2O3) | HCID 159425 | — |
| Product | Indium oxide tin oxide samarium oxide | HCID 131731696 | — |
Reaction Steps
Except that a target containing indium oxide, tin oxide and samarium oxide (molar ratio of In:Sn:Sm=60:35:5) was used, indium oxide-tin oxide-samarium oxide (ITSmO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
|---|---|
| Patent number | US09249032B2 |
| Source dataset | uspto-grants-2016_02 |
| ORD ID | ord-af2deb8a4e7543958bd9c0e0bbbb1d19 |
| Source note | uspto-grants-2016_02 |