HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1781129Generated: November 1, 2026
Chlorotrimethylsilane → HCID 54362776, compound
https://huagongshe.com/reaction/1781129
Participants
| Role | Name | HCID | Charge |
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| Reactant | Chlorotrimethylsilane | HCID 6397 | — |
| Reactant | Lithium Hexamethyldisilazide | HCID 2733832 | — |
| Reactant | 3-TRIMETHYLSILYLPROPYNAL | HCID 2760865 | — |
| Product | HCID 54362776 | HCID 54362776 | — |
Reaction Steps
Lithium bis(trimethylsilyl)amide is placed in a reaction vessel to which 3-(trimethylsilyl)-2-propynal of step 1 is added in an aprotic solvent. During the addition of 3-(trimethylsilyl)-2-propynal the pot temperature should be maintained between -40° to -20° C. to ensure stability of the intermediate imine. To the resulting solution is added trimethylsilyl chloride and the resulting mixture stirred at a temperature ranging from -40° to -20° C. for 1 hour. This reaction step yields N,3-bis(trimethylsilyl)-2-propyn-1-imine which is not isolated from the vessel but is confirmed by GC. To the reaction vessel is now added t-butyl acetate and a catalytic amount of lithium bis(trimethylsilyl)amide. The reaction mixture is allowed to stir for 2 h at a temperature ranging from -40° to -20° C. to give (±)1,1-dimethylethyl 3-amino-5-(trimethylsilyl)-4-pentynoate which is isolated after an aqueous ammonium chloride quench and used in the next step. In order to insure complete cleavage of the nitrogen-silicon bond the stir time for this phase should not be less than 30 minutes.
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| Patent number | US05631399 |
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| Source dataset | uspto-grants-1997_05 |
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| ORD ID | ord-83206fb71f6a4ec4b4672167c536c0a0 |
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| Source note | uspto-grants-1997_05 |
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