HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1787310Generated: October 30, 2026
HCID 23113986, compound → HCID 23113999, compound
https://huagongshe.com/reaction/1787310
Participants
| Role | Name | HCID | Charge |
|---|
| Reactant | HCID 23113986 | HCID 23113986 | — |
| Reactant | HCID 178418573 | HCID 178418573 | — |
| Solvent | Water | HCID 962 | — |
| Product | HCID 23113999 | HCID 23113999 | 57.3% |
Reaction Steps
To methylmagnesium bromide (1.0 M, THF solution, 10 mL, 10 mmol) was added at 0° C. N-(7-formyl-3-(4-isopropylphenyl)-4,6-dimethyl-2,3-dihydro-1-benzothien-5-yl)-3,3-dimethylbutanamide (600 mg, 1.42 mmol) obtained in Example 163 and the reaction solution was stirred at room temperature for 1 hour. The reaction solution was added to water and the product was extracted with ethyl acetate. The organic layer was washed with 1 N hydrochloric acid and saturated brine, dried over anhydrous sodium sulfate, and concentrated under reduced pressure. To a mixture of the obtained residue in trifluoroacetic acid (3 mL) was added with ice-cooling triethylsilane (1.0 mL) and the resulting mixture was stirred at room temperature for 30 minutes. After the reaction solution was concentrated under reduced pressure, to the residue was added an aqueous saturated sodium hydrogen carbonate solution and the aqueous layer was made alkaline, and the mixture was extracted with ethyl acetate. The organic layer was washed with water and saturated brine, dried over anhydrous sodium sulfate, and concentrated under reduced pressure. The obtained residue was purified by silica gel column chromatography (ethyl acetate:hexane=1:4) to obtain 345 mg (yield: 57%) of the title compound. Melting point: 172-173° C. (hexane-ethyl acetate).
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| Patent number | US07507841B2 |
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| Source dataset | uspto-grants-2009_03 |
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| ORD ID | ord-15810e0ecd594a7a8a8ddff38dd1bea0 |
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| Source note | uspto-grants-2009_03 |
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