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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1787310Generated: October 30, 2026

HCID 23113986, compound → HCID 23113999, compound

https://huagongshe.com/reaction/1787310

Reaction equation

Participants

RoleNameHCIDCharge
ReactantHCID 23113986HCID 23113986—
ReactantHCID 178418573HCID 178418573—
SolventWaterHCID 962—
ProductHCID 23113999HCID 2311399957.3%

Reaction Steps

To methylmagnesium bromide (1.0 M, THF solution, 10 mL, 10 mmol) was added at 0° C. N-(7-formyl-3-(4-isopropylphenyl)-4,6-dimethyl-2,3-dihydro-1-benzothien-5-yl)-3,3-dimethylbutanamide (600 mg, 1.42 mmol) obtained in Example 163 and the reaction solution was stirred at room temperature for 1 hour. The reaction solution was added to water and the product was extracted with ethyl acetate. The organic layer was washed with 1 N hydrochloric acid and saturated brine, dried over anhydrous sodium sulfate, and concentrated under reduced pressure. To a mixture of the obtained residue in trifluoroacetic acid (3 mL) was added with ice-cooling triethylsilane (1.0 mL) and the resulting mixture was stirred at room temperature for 30 minutes. After the reaction solution was concentrated under reduced pressure, to the residue was added an aqueous saturated sodium hydrogen carbonate solution and the aqueous layer was made alkaline, and the mixture was extracted with ethyl acetate. The organic layer was washed with water and saturated brine, dried over anhydrous sodium sulfate, and concentrated under reduced pressure. The obtained residue was purified by silica gel column chromatography (ethyl acetate:hexane=1:4) to obtain 345 mg (yield: 57%) of the title compound. Melting point: 172-173° C. (hexane-ethyl acetate).

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS07507841B2
Source datasetuspto-grants-2009_03
ORD IDord-15810e0ecd594a7a8a8ddff38dd1bea0
Source noteuspto-grants-2009_03