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Huagongshe화공사 화학 정보 인쇄 보고서 · 연구 참고용
HRID 2058899생성일: 2026년 10월 25일

N,N,N',N'-Tetramethylethylenediamine → 1-isopropyl-2-trimethylsilyl-2,3-dihydro-1H-2,1-benzazaphosphole-1-oxide

https://huagongshe.com/reaction/2058899

반응식

참여 물질

역할이름HCID투입량
반응물N,N,N',N'-TetramethylethylenediamineHCID 8037—
반응물N-BenzyltrimethylsilylamineHCID 519016—
반응물Isopropylphosphonic dichlorideHCID 2793751—
반응물ButyllithiumHCID 178418339—
용매HexaneHCID 8058—
용매CyclohexaneHCID 8078—
생성물1-isopropyl-2-trimethylsilyl-2,3-dihydro-1H-2,1-benzazaphosphole-1-oxideHCID 20548446—

반응 조건

온도26 °C

반응 단계

Under a static nitrogen atmosphere at 0° C., a solution of n-butyllithium (8 g, 0.125 mol) in hexane was added to a solution of tetramethylethylenediamine (14.3 g, 0.123 mol) in 60 ml. of anhydrous cyclohexane with constant stirring. While maintaining the temperature of the reaction at 0° C., a solution of N-trimethylsilylbenzylamine (10.75 g, 0.06 mol) in 60 ml. of anhydrous cyclohexane was added to the reaction mixture to produce a suspension containing a dilithio compound. This suspension was stirred for 16.5 hours at 26° C. and then cooled to -72° C. using a solid carbon dioxide-acetone bath. A solution of isopropylphosphonic dichloride (10.3 g, 0.064 mol) in 60 ml. of anhydrous cyclohexane was rapidly added to the suspension causing the temperature of the reaction to increase to -10° C. The reaction mixture was allowed to cool to -72° C., after which time the solid carbon dioxide-acetone bath was removed and the reaction mixture was stirred for 1.5 hours at 26° C. The reaction mixture was cooled to 0° C. and then quenched with the rapid addition of 12 ml. of acetic acid. The reaction mixture was concentrated under vacuum and the resulting residue was partitioned between methylene chloride and water. The layers were separated and the methylene chloride layer was dried over magnesium sulfate and concentrated in vacuo to yield a red oil. The red oil was distilled at 180° C. and 0.2 mm to yield 1-isopropyl-2-trimethylsilyl-2,3-dihydro-1H-2,1-benzazaphosphole-1-oxide.

출처 및 근거

DOI10.6084/m9.figshare.5104873.v1
특허 번호US04319913
출처 데이터셋uspto-grants-1982_03
ORD IDord-4faa244af1524b5283394e3b7926800f
출처 메모uspto-grants-1982_03