Back
HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 2355262Generated: October 30, 2026

Hydrochloric Acid → HCID 67176661, compound

https://huagongshe.com/reaction/2355262

Reaction equation

Participants

RoleNameHCIDCharge
ReactantHydrochloric AcidHCID 313—
ReactantPentaneHCID 8003—
ReactantTetrahydrofuranHCID 8028—
ReactantTetrabutylammonium FluorideHCID 2724141—
Reactant2-cyclopropyl-N-methoxy-N-methylacetamideHCID 22473766—
ReactantHCID 60205807HCID 60205807—
ReactantHCID 178418306HCID 178418306—
SolventWaterHCID 962—
SolventDiethyl EtherHCID 3283—
ProductHCID 67176661HCID 6717666194.4%

Reaction Steps

Stir 1-bromo-2,4-bis-(tert-butyl-dimethyl-silanyloxy)-benzene (100 g, 240 mmol) in diethyl ether (1 L, anhydrous) at −60° C. and treat with 1.7M tert-butyllithium in pentane (290 mL, 493 mmol) via addition funnel over a 10 minute period. Stir for 15 min, then treat with 2-cyclopropyl-N-methoxy-N-methyl-acetamide (34 g, 237 mmol) in a minimum amount of ethyl ether. Remove cold bath, stir for 1 hr, treat with 1N aqueous hydrochloric acid (100 mL), and stir for an additional hour. Separate the layers and wash the organic layer with 1N aqueous hydrochloric acid (100 mL), brine, dry with magnesium sulfate, filter, and evaporate. Dissolve the residue in tetrahydrofuran (1 L), treat with 1N tetrabutylammonium fluoride solution in tetrahydrofuran (500 mL, 500 mmol), and stir for 3 hrs. Pour mixture into 1 L of water containing 120 mL of 5N hydrochloric acid, separate layers, and extract water layer twice with ethyl acetate. Wash organic layers with brine, dry with magnesium sulfate, filter, and evaporate. Chromatograph residue on silica gel (Biotage® Radial Compression fitted with a 75-L column) eluting with 25% ethyl acetate in hexanes to isolate the title compound (43 g, 94% yield). 1H NMR (CDCl3) δ 12.83 (s, 1H), 7.60 (d, J=8.0 Hz, 1H), 6.39 (m, 2H), 5.98 (s, 1H), 2.80 (d, J=4.0 Hz, 2H), 1.13 (m, 1H), 0.60 (m, 2H), 0.22 (m, 2H).

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS07754742B2
Source datasetuspto-grants-2010_07
ORD IDord-f72bba7bb1a943a4a508e8630cc3a861
Source noteuspto-grants-2010_07