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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 2406870Generated: October 31, 2026

Sulfuric Acid → HCID 54754810, compound

https://huagongshe.com/reaction/2406870

Reaction equation

Participants

RoleNameHCIDCharge
ReactantSulfuric AcidHCID 1118—
ReactantSodium HydroxideHCID 14798—
ReactantPotassium thiocyanateHCID 516872—
ReactantSodium bis(2-methoxyethoxy)aluminiumhydrideHCID 21584525—
ReactantHCID 86691657HCID 86691657—
SolventTolueneHCID 1140—
SolventSodium HypochloriteHCID 23665760—
ProductHCID 54754810HCID 5475481053%

Reaction Conditions

Temperature85 °C

Reaction Steps

Sulfuric acid (1.61 mL, 2.96 g, 30.2 mmol) was slowly added to a suspension of 3-methylenespiro[bicyclo[2.2.1]heptane-2,1′-cyclopentane]. (4.80 g, 29.6 mmol) and potassium thiocyanate. (2.96 g, 30.2 mmol) at 50° C. The reaction mixture was then stirred at 85° C. for 5.5 h, cooled to ambient temperature, diluted with toluene (30 mL) and washed with water (20 mL) followed by with saturated aqueous sodium bicarbonate (10 mL). The toluene layer was dried over anhydrous sodium sulfate and filtered To the filtrate was added sodium bis(methoxyethoxy)aluminum hydride (40% solution in toluene, 2 equivalents) and the reaction was stirred at 85° C. for 2 h. The reaction was cooled to 0° C., and a solution of 3N aqueous sodium hydroxide (20 mL) in 5% aqueous sodium hypochlorite (35 mL) was slowly added (drop-wise at intervals). The toluene layer was separated and washed with water (30 mL). The toluene layer was then extracted with 1N aqueous hydrochloric acid (2×10 mL) and discarded. The aqueous hydrochloric acid layer was made basic (to pH 10) by addition of 10% aqueous sodium hydroxide and extracted with diethyl ether. The diethyl ether extracts were concentrated, and the residue was purified by silica gel column chromatography, using 0-40% CMA (chloroform:methanol:30% aqueous ammonia, 9:1:0.1) in chloroform to obtain N,3-dimethylspiro[bicyclo[2.2.1]heptane-2,1′-cyclopentan]-3-amine (1.2 g, 53%) as oil. 1H NMR (CDCl3, 400 MHz): δ 2.28 (s, 3H), 2.24 (bs, 1H), 1.84-1.76 (m, 2H), 1.73-1.68 (m, 1H), 1.62-1.52 (m, 4H), 1.48-1.24 (m, 7H), 1.09-1.05 (m, 1H), 1.04 (s, 3H); LCMS (m/z): 194 (M+1).

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS08809397B2
Source datasetuspto-grants-2014_08
ORD IDord-ff304e6d6ba84c41b120e091cfaa2731
Source noteuspto-grants-2014_08