HCID 5325666, compound → Dimethyltelluride

HRID 373734Notes

Reaction equation

HRID 373734 reaction equation
[CH3:1][Te:2](C)(C)[CH3:3].[CH3:6][Si:7]([CH2:10][Te:11](C[Si](C)(C)C)(C[Si](C)(C)C)[CH2:12][Si:13]([CH3:16])([CH3:15])[CH3:14])([CH3:9])[CH3:8].[CH:27]([Te:29](C=C)(C=C)[CH:30]=[CH2:31])=[CH2:28]>>[CH3:1][Te:2][CH3:3].[CH3:16][Si:13]([CH2:12][Te:11][CH2:10][Si:7]([CH3:9])([CH3:8])[CH3:6])([CH3:14])[CH3:15].[CH:27]([Te:29][CH:30]=[CH2:31])=[CH2:28]

Participants

6

Reactant 3

HCID 5325666HCID 5325666, compoundHCID 11812787HCID 11812787, compoundHCID 14892799HCID 14892799, compound

Product 3

HCID 68977DimethyltellurideHCID 143947Tellurium, diethenyl-HCID 14892798HCID 14892798, compound

Procedure

The reactions, as illustrated in equations (1), (1)(a), (2), (2)(a), or (2)(b) above, for the production of tetraorganyl tellurium, tetramethyl tellurium, tetraorganyl tellurium, tetra(trimethylsilylmethyl) tellurium, or tetravinyl tellurium, are commenced at low temperature ranging from about -100° C. to about 25° C. If the above reactions are carried out at higher temperature, the corresponding diorganyl tellurium, dimethyl tellurium, bis(trimethylsilyl-methyl) tellurium, or divinyl tellurium derivatives will also be produced, or other side reactions will occur. After the reactions have proceeded to form the tetraorganyl tellurium, tetramethyl tellurium, tetra(trimethylsilylmethyl) tellurium, or tetravinyl tellurium product, the reaction mixture is warmed to room temperature and is stirred; and if a Grignard reagent was used, 1,4-dioxane is added to remove magnesium salts. The slurry is then cooled down again within the above noted -100° C. to 25° C. range, so that all of the salts will precipitate out of solution. The reaction mixture is then filtered to remove precipitated salts. The resulting solution containing the tetraorganyl tellurium, tetramethyl tellurium, tetra(trimethylsilylmethyl) tellurium, or tetravinyl tellurium is then vacuum distilled to remove the solvent, and the crude product purified, e.g., by vacuum distillation for the liquid product,tetramethyl tellurium, or by fractional recrystallization for the solid product, tetra(trimethylsilylmethyl) tellurium.

Workup

  1. customranging from about -100° C. to about 25° C

Sources & evidence

ORD record
ord-4220b9724f2b4ea1be43858a37c83033
Source dataset
uspto-grants-1992_11
Patent number
US05164524

Reaction notes

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