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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 589220Generated: October 31, 2026

Hydrochloric Acid → HCID 86726592, compound

https://huagongshe.com/reaction/589220

Reaction equation

Participants

RoleNameHCIDCharge
ReactantHydrochloric AcidHCID 313—
ReactantTriphenylphosphane dibromideHCID 12890784—
ReactantEthyl acetate hexaneHCID 21226206—
ReactantHCID 131727682HCID 131727682—
ReactantHCID 178455850HCID 178455850—
SolventWaterHCID 962—
SolventDiethyl EtherHCID 3283—
SolventDichloromethaneHCID 6344—
ProductHCID 86726592HCID 8672659282%

Reaction Steps

To triphenylphosphine dibromide (129.6 mg, 0.3070 mmol), distilled dichloromethane (2 ml) was added under a nitrogen atmosphere and dissolved. Then a solution prepared by dissolving 1-iodo-4-(diallylethoxysilyl)benzene (13) (100 mg, 0.2791 mmol) into a distilled dichloromethane (1 ml) was added, stirred at room temperature for 3 hours. After stirring, diethyl ether solution of 1M allylmagnesium bromide (0.6978 ml, 0.6978 mmol) was added dropwise, stirred at room temperature for 2 hours. The reacted mixture was cooled down to 0° C., then diluted with water to stop the reaction. 10% hydrochloric acid was added until all salt was completely dissolved. The obtained organic layer was separated and the obtained water layer was extracted with dichloromethane. The collected organic layer was each washed with saturated sodium bicarbonate aqueous solution and saturated saline solution in this order, then dried over anhydrous magnesium sulfate, then filtered and condensed under reduced atmosphere, obtaining a crude product. The crude product was passed through a silica gel short column (eluent: hexane/ethyl acetate=10/1). As is shown in the following chemical reaction equation, 1-iodo-4-(triallylsilyl)benzene (14) was obtained (yield: 81.4 mg, yield (%): 82%).

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS09228107B2
Source datasetuspto-grants-2016_01
ORD IDord-9502579fac9a4935a2e3a22734323305
Source noteuspto-grants-2016_01