Back
HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 589224Generated: October 31, 2026

HCID 86726596, compound → HCID 86726593, compound

https://huagongshe.com/reaction/589224

Reaction equation

Participants

RoleNameHCIDCharge
ReactantHCID 86726596HCID 86726596—
ReactantHCID 178418306HCID 178418306—
SolventPentaneHCID 8003—
ProductHCID 86726593HCID 8672659385%

Reaction Conditions

Temperature-78 °C

Reaction Steps

Under a nitrogen atmosphere, bis{3-(triallylsilyl)propyl}dimethoxysilane (29′) (1.0 g, 2.097 mmol) was cooled down to −78° C., then n-pentane solution of 1.61M t-butyllithium 1.954 mL (3.145 mmol) was added dropwise, then stirred at −78° C. for 17 hours. The reacted mixture was cooled down to 0° C., quenched with water, saturated ammonium chloride aqueous solution was added. The obtained organic layer was separated. The obtained water layer was extracted with diethyl ether and the collected organic layer was each washed with saturated sodium bicarbonate aqueous solution and saturated saline solution in this order, dried over anhydrous magnesium sulfate, filtered, concentrated under reduced pressure, obtaining a crude product. The crude product was purified through short silica gel column chromatography (eluent: hexane/ethyl acetate=20/1), obtaining bis({3-(triallylsilyl)propyl}(tert-butyl)methoxysilane (30) (yield: 0.902 g, yield (%): 85%).

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS09228107B2
Source datasetuspto-grants-2016_01
ORD IDord-e728f2e4e6b54abdaef300b6321eda05
Source noteuspto-grants-2016_01