Trimethyl((tributylstannyl)ethynyl)silane → HCID 68814361, compound
Reaction equation
Br[C:2]1[C:3]([C:7]([NH2:9])=[O:8])=[CH:4][S:5][CH:6]=1.C([Sn]([C:23]#[C:24][Si:25]([CH3:28])([CH3:27])[CH3:26])(CCCC)CCCC)CCC>>[CH3:26][Si:25]([C:24]#[C:23][C:2]1[C:3]([C:7]([NH2:9])=[O:8])=[CH:4][S:5][CH:6]=1)([CH3:28])[CH3:27]Participants
3
Procedure
The product from step B (1 g), tributylstannyl(trimethylsilyl)acetylene (2.16 g) and palladium(tetrakis)triphenylphoshine (0.28 g) were placed into degassed toluene (20 ml) and the mixture was heated under reflux for 16 hours under an atmosphere of nitrogen. After cooling, the solvent was removed and the residue was chromatographed on silica gel (hexane:ethylacetate 3:1). After three consecutive crystallisations from hexane, 0.3 g of 4-(trimethylsilyl)ethinyl-3-thiophene formamide was obtained (m.p. 90-94° C.).
Workup
- custominto degassed toluene (20 ml)
- temperaturethe mixture was heated
- temperatureunder reflux for 16 hours under an atmosphere of nitrogen
- temperatureAfter cooling
- customthe solvent was removed
- customthe residue was chromatographed on silica gel (hexane:ethylacetate 3:1)
- customAfter three consecutive crystallisations from hexane
Sources & evidence
- ORD record
- ord-c2f06b1b271c4f27a58c948505154d41
- Source dataset
- uspto-grants-2009_09
- Patent number
- US07582589B2
Reaction notes
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