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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 856881Generated: October 26, 2026

Tetraethoxysilane → Trifluorovinyl triethoxysilane

https://huagongshe.com/reaction/856881

Reaction equation

Participants

RoleNameHCIDCharge
ReactantTetraethoxysilaneHCID 6517—
ReactantChlorotrifluoroethyleneHCID 6594—
ReactantCID 53628100HCID 178418400—
SolventDiethyl EtherHCID 3283—
ProductTrifluorovinyl triethoxysilaneHCID 21864279—

Reaction Conditions

Temperature-80 °C

Reaction Steps

200 ml of freshly distilled dry Et2O is added to a 500 ml vessel (under an argon atmosphere). The vessel is cooled down to −80° C. and 15 g (0.129 mol) of CF2═CFCl gas is bubbled to Et2O. 100 ml (0.13 mol) of sec-BuLi is added dropwise during three hours. The temperature of the solution is kept below −60° C. all the time. The solution is stirred for 15 minutes and 29 ml (27.08 g, 0.130 mol) of Si(OEt)4 is added in small portions. The solution is stirred for over night allowing it to warm up to room temperature. Formed red solution is filtered and evaporated to dryness to result crude trifluorovinyltriethoxysilane, CF2═CFSi(OEt)3.

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS07144827B2
Source datasetuspto-grants-2006_12
ORD IDord-bd3dbb0b19a14264b7cd62418b75f69f
Source noteuspto-grants-2006_12