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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 915549Generated: October 28, 2026

Triethoxysilane → HCID 86600359, compound

https://huagongshe.com/reaction/915549

Reaction equation

Participants

RoleNameHCIDCharge
ReactantTriethoxysilaneHCID 13830—
ReactantHCID 86204655HCID 86204655—
ProductHCID 86600359HCID 86600359—

Reaction Conditions

Temperature80 °C

Reaction Steps

A 1-liter, 3-neck flask equipped with magnetic stirrer, pot thermometer, addition funnel and condenser was charged with 143.2 g of 2,2-Bis(allyloxymethyl)-1-trimethylsiloxybutane. After heating to ˜80° C., 35 g of triethoxysilane was added followed by 1 ml of Karstedt catalyst containing 2% Pt. Once initiation was observed, the balance of triethoxysilane (133.4 g) was added at a rate to maintain temperature at 80-110° C. When the addition was complete, an additional 0.5 ml of Karstedt catalyst was added and temperature of 90° C. was maintained for 2 hours. A GC indicated the reaction was not complete. Two additional portions 43 g of triethoxysilane and 0.5 g of Karstedt were added, maintaining the temperature at 95-105° C. The product was purified by means of a wiped-film evaporator, removing volatiles on a first pass and then distilling crude product on a second pass. A short-path distillation produced purified product: b.p.: 200-205° C. at 0.8 mm; density: 0.980; 1HNMR(C6D6): 0.13(s, 9H), 0.77(m, 4H), 1.00(m, 3H), 1.14(t, 18H), 1.18(m, 2H), 1.85(m, 4H) 3.38(dd, 8H), 3.76(s, 2H), 3.81(q, 12H). The FTIR showed a strong absorption at 1105.1 cm−1, which is characteristic of Si—O.

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS07265236B2
Source datasetuspto-grants-2007_09
ORD IDord-f2b59a61e05541468357a025a5934877
Source noteuspto-grants-2007_09