均三甲苯 → 二茂铁

HRID 408052

反应方程式

HRID 408052 反应方程式
[C:1]1([CH3:9])[CH:6]=[C:5]([CH3:7])C=C(C)C=1.C([C-:12]1[CH:16]=[CH:15][CH:14]=[CH:13]1)=C.[CH-]1C=CC=C1.[Fe+2:22].[C-]1(C=O)C=CC=C1.[CH-]1C=CC=C1.[Fe+2]>>[CH-:5]1[CH:6]=[CH:1][CH:9]=[CH:7]1.[CH-:12]1[CH:16]=[CH:15][CH:14]=[CH:13]1.[Fe+2:22]

参与物

4

反应物 3

HCID 7947均三甲苯HCID 15184314二茂铁甲醛2 次HCID 15807218乙烯基二茂铁2 次

产物 1

HCID 7611二茂铁

反应条件

温度
150 °C

实验过程

Approximately 10 mmol mesitylene solution of vinylferrocene (VFc) or ferrocenecarboxaldehyde (FcA) was put in a round bottom flask and bubbled with nitrogen or argon gas for at least 30 min. A piece of the H-terminated silicon substrate was then immersed in the solution and allowed to react with VFc or FcA for about 12 h under reflux at about 150° C. in an oil bath. During the reaction, the solution was also purged with nitrogen (or argon) to eliminate dissolved oxygen and to prevent the substrate from being oxidized. After the reaction, the substrate derivatized with VFc or FcA was rinsed with dichloromethane, acetonitrile, and methanol; and dried under a stream of nitrogen gas. The derivatization of the H-terminated surface with ferrocene moieties as described in Example 2 is illustrated in FIG. 5.

后处理

  1. custombubbled with nitrogen or argon gas for at least 30 min
  2. customto react with VFc or FcA for about 12 h
  3. customDuring the reaction
  4. customthe solution was also purged with nitrogen (or argon)
  5. dissolutionto eliminate dissolved oxygen
  6. customAfter the reaction
  7. washwas rinsed with dichloromethane, acetonitrile, and methanol
  8. customand dried under a stream of nitrogen gas

来源与证据

ORD记录
ord-9b8f4d7ad4174ee1b78975c22da0caae
来源数据集
uspto-grants-2014_06
专利号
US08758584B2

关联笔记

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