高香草酸 → HCID 178444560，化合物

HRID 500080

反应方程式

HRID 500080 反应方程式
[OH:1][C:2]1[CH:7]=[CH:6][C:5]([CH2:8][C:9]([OH:11])=O)=[CH:4][C:3]=1[O:12][CH3:13].F[P-](F)(F)(F)(F)F.[N:21]1(O[P+](N2CCCC2)(N2CCCC2)N2CCCC2)[C:25]2[CH:26]=[CH:27][CH:28]=[CH:29][C:24]=2N=N1.ClCCl>C(N(CC)CC)C>[OH:1][C:2]1[CH:7]=[CH:6][C:5]([CH2:8][C:9]([NH:21][C@H:25]2[CH2:24][CH2:29][C@@H:28](/[CH:7]=[CH:2]/[CH2:3][CH2:4][CH3:5])[CH2:27][CH2:26]2)=[O:11])=[CH:4][C:3]=1[O:12][CH3:13]

参与物

5

反应物 3

HCID 1738高香草酸HCID 6344二氯甲烷HCID 27246991H-苯并三唑-1-基氧三吡咯烷基六氟磷酸盐

产物 1

HCID 178444560HCID 178444560，化合物收率 73%

试剂、催化剂与溶剂 1

HCID 8471三乙胺溶剂

实验过程

To a mixture of the above product (2) (2.17 g), 4-hydroxy-3-methoxyphenyacetic acid (1.16 g), benzotriazol-1-yloxy-tris(pyrrolidino)phosphonium hexafluorophosphate (3.33 g) and dichloromethane (50 ml) under ice-cooling was added triethylamine (2.68 ml). The reaction mixture was stirred at room temperature for 1 hour, and then washed with saturated aqueous ammonium chloride and then brine. The organic layer was dried over sodium sulfate, and then the solvent was removed in vacuo. The residue was purified by a silica gel chromatography (eluent: gradient from 100% hexane/0% ethyl acetate to 0% hexane/100% ethyl acetate) and the recrystallized from hexane-ethyl acetate to give 770 mg of the desired compound.

后处理

  1. temperaturecooling
  2. washwashed with saturated aqueous ammonium chloride
  3. dry with materialThe organic layer was dried over sodium sulfate
  4. customthe solvent was removed in vacuo
  5. customThe residue was purified by a silica gel chromatography (eluent: gradient from 100% hexane/0% ethyl acetate to 0% hexane/100% ethyl acetate)
  6. customthe recrystallized from hexane-ethyl acetate

来源与证据

ORD记录
ord-ef16bb072d8446eebb4da8661681bcc3
来源数据集
uspto-grants-2010_08
专利号
US07767854B2

关联笔记

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