Tetrakis(trimethylsiloxy)silane
3555-47-3C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)CVNRWTCZXQWOWIG-UHFFFAOYSA-NSicherheitsangaben dienen nur zur Orientierung und ersetzen weder das Sicherheitsdatenblatt (SDB) des Lieferanten noch geltende Vorschriften oder eine fachliche Bewertung.
This chemical does not meet GHS hazard criteria for 15.9% (63 of 397) of reports.
Warning
H315 (51.6%): Causes skin irritation [Warning Skin corrosion/irritation]
P261, P264, P264+P265, P271, P273, P280, P302+P352, P304+P340, P305+P351+P338, P319, P321, P332+P317, P337+P317, P362+P364, P403+P233, P405, and P501 (click each P-code to see the statement)
Aggregated GHS information provided per 397 reports by companies from 6 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.
Chemical: Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-
Hazard Traits - Bioaccumulation; Environmental Persistence
REACH registered substance: 1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]trisiloxane (EC: 222-613-4)
Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis(trimethylsilyl)oxy-: Does not have an individual approval but may be used as a component in a product covered by a group standard. It is not approved for use as a chemical in its own right.
VerwendenTetrakis(trimethylsilyloxy)silane (TTMS) is an organosilicon compound used as a precursor to prepare nanostructured organosilicon polymer films by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure. TTMS along with cyclohexane can also be used to synthesize low dielectric constant SiCOH films by PECVD method.
Keine Reaktionsaufzeichnungen unter den aktuellen Filterkriterien.
Wird geladen…
3555-47-3DTXSID9042463