N,N,N',N',N'',N''-Hexamethylsilantriamin

N,N,N',N',N'',N''-Hexamethylsilanetriamine

HCID 84795CAS 15112-89-7

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Grundinformationen

Standard-SMILES: CN(C)[SiH](N(C)C)N(C)C
InChIKey: TWVSWDVJBJKDAA-UHFFFAOYSA-N
Summenformel: C6H19N3Si
Durchschnittliche Molmasse: 161,32 g/mol
Monoisotopische Masse: 161,13482414

Namen und Bezeichner

Bevorzugter Name: N,N,N',N',N'',N''-Hexamethylsilanetriamine
IUPAC: N-[bis(dimethylamino)silyl]-N-methylmethanamine
Lokaler Name: N,N,N',N',N'',N''-Hexamethylsilantriamin
Englischer Name: Tris(dimethylamino)silane
Summenformel: C6H19N3Si
Molmasse: 161.32

Namen und Synonyme

Silanetriamine, N,N,N',N',N'',N''-hexamethyl-RefChem:926433DTXCID601024209239-165-015112-89-7DTXSID00884786N,N,N',N',N'',N''-HexamethylsilanetriamineTris(dimethylamino)silane3DMAS(Me2N)3SiHN-[bis(dimethylamino)silyl]-N-methylmethanamineSCHEMBL35636

Weitere Namen anzeigen

TDMASDK087LS 1460amino)siL3DMAS : [(CH3)2N]3SiHTris(dimethyamino)silaneTri(dimethylamino)silaneTris(dimethylamido)silane

TWVSWDVJBJKDAA-UHFFFAOYSA-NNS00052589F87140Tris(dimethylamino)silane, electronic grade, 99.999%Tris(dimethylamino)silane, packaged for use in deposition systemsN,N,N inverted exclamation marka,N inverted exclamation marka,N inverted exclamation marka inverted exclamation marka,N inverted exclamation marka inverted exclamation marka-Hexamethylsilanetriamine

Datenbank-Bezeichner

CAS: 15112-89-7
PubChem CID: 84795
DTXSID: DTXSID00884786
EC Number: 239-165-0

Eigenschaften

Berechnete Struktureigenschaften

Polarare Oberfläche (TPSA): 9,7 Å²
H-Brücken-Donoren: 0
H-Brücken-Akzeptoren: 3
Frei drehbare Bindungen: 3
Schwere Atome: 10
Formalladung: 0
Komplexität: 74

Physikochemische Eigenschaften

Schmelzpunkt: 0 °C · <0°C
Siedepunkt: 145 °C · 145 °C
Dichte: 0 · 0,838 g/cm3
Brechungsindex: 1.4247 · 1.4247
Flammpunkt: 25 °C · 25°C
storage temp.: 2 · 2-8°C, protect from light
pka: 10.93 · 10.93±0.70(Predicted)
Aggregatzustand: liquid
Farbe: colorless to light yellow
Wichte: 0.84 · 0.84
InChI: 1S/C6H19N3Si/c1-7(2)10(8(3)4)9(5)6/h10H,1-6H3
InChIKey: TWVSWDVJBJKDAA-UHFFFAOYSA-N
SMILES: CN(C)[SiH](N(C)C)N(C)C
EPA chemische Informationen: N,N,N',N',N'',N''-Hexamethylsilanetriamine (15112-89-7)

Sicherheit und Regulatorisches

GHS-Klassifizierung

GHS Classification · 5 Einträge

This chemical does not meet GHS hazard criteria for 5.8% (4 of 69) of reports.

Danger

H225 (56.5%): Highly Flammable liquid and vapor [Danger Flammable liquids]

P210, P223, P231+P232, P233, P240, P241, P242, P243, P260, P261, P262, P264, P270, P271, P280, P284, P301+P317, P301+P330+P331, P302+P335+P334, P302+P352, P302+P361+P354, P303+P361+P353, P304+P340, P305+P354+P338, P316, P320, P321, P330, P361+P364, P363, P370+P378, P402+P404, P403+P233, P403+P235, P405, and P501 (click each P-code to see the statement)

Aggregated GHS information provided per 69 reports by companies from 7 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.

Gefahrenhinweise

Regulatory InformationStatus: Active Update: 15-09-2022 https://echa.europa.eu/registration-dossier/-/registered-dossier/34209

Hazard Classes and CategoriesFlam. Liq. 2 (56.5%)

Sicherheitsdaten

wgk: 3
tsca: TSCA listed
ridadr: 1993
RTECS-Nr.: VV5800000
risk_code: 10-36/37/38-52/53-34-29-20-15-11
Toxizität: rabbit,LD50,skin,477mg/kg (477mg/kg),LIVER: OTHER CHANGESLUNGS, THORAX, OR RESPIRATION: CHRONIC PULMONARY EDEMA,Toxicology and Industrial Health. Vol. 5, Pg. 45, 1989.
hazard_code: F,C
safety_code: 16-26-36/37/39-45-43
Speicherklasse: 4.3 - Hazardous materials which set free flammable gases upon contact with water
Hazard Classifications: Acute Tox. 3 DermalAcute Tox. 3 InhalationAcute Tox. 4 OralEye Dam. 1Flam. Liq. 2Skin Corr. 1BWater-react 2

Chemie und Industrie

Verwendung und Herstellung

General Manufacturing InformationSilanetriamine, N,N,N',N',N'',N''-hexamethyl-: ACTIVE

Anwendungen · 1 Eintrag

VerwendenTris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.