N,N,N',N',N'',N''-Hexamethylsilantriamin
N,N,N',N',N'',N''-Hexamethylsilanetriamine
Grundinformationen
- CAS
15112-89-7- Standard-SMILES
CN(C)[SiH](N(C)C)N(C)C- InChIKey
TWVSWDVJBJKDAA-UHFFFAOYSA-N- Summenformel
- C6H19N3Si
- Durchschnittliche Molmasse
- 161,32 g/mol
- Monoisotopische Masse
- 161,13482414
Namen und Bezeichner
- Bevorzugter Name
- N,N,N',N',N'',N''-Hexamethylsilanetriamine
- IUPAC
- N-[bis(dimethylamino)silyl]-N-methylmethanamine
- Lokaler Name
- N,N,N',N',N'',N''-Hexamethylsilantriamin
- Englischer Name
- Tris(dimethylamino)silane
- Summenformel
- C6H19N3Si
- Molmasse
- 161.32
Namen und Synonyme
Silanetriamine, N,N,N',N',N'',N''-hexamethyl-RefChem:926433DTXCID601024209239-165-015112-89-7DTXSID00884786N,N,N',N',N'',N''-HexamethylsilanetriamineTris(dimethylamino)silane3DMAS(Me2N)3SiHN-[bis(dimethylamino)silyl]-N-methylmethanamineSCHEMBL35636
Weitere Namen anzeigen
TDMASDK087LS 1460amino)siL3DMAS : [(CH3)2N]3SiHTris(dimethyamino)silaneTri(dimethylamino)silaneTris(dimethylamido)silane
TWVSWDVJBJKDAA-UHFFFAOYSA-NNS00052589F87140Tris(dimethylamino)silane, electronic grade, 99.999%Tris(dimethylamino)silane, packaged for use in deposition systemsN,N,N inverted exclamation marka,N inverted exclamation marka,N inverted exclamation marka inverted exclamation marka,N inverted exclamation marka inverted exclamation marka-Hexamethylsilanetriamine
Datenbank-Bezeichner
- CAS
15112-89-7- PubChem CID
- 84795
- DTXSID
DTXSID00884786- EC Number
- 239-165-0
Eigenschaften
Berechnete Struktureigenschaften
- Polarare Oberfläche (TPSA)
- 9,7 Ų
- H-Brücken-Donoren
- 0
- H-Brücken-Akzeptoren
- 3
- Frei drehbare Bindungen
- 3
- Schwere Atome
- 10
- Formalladung
- 0
- Komplexität
- 74
Physikochemische Eigenschaften
- Schmelzpunkt
- 0 °C · <0°C
- Siedepunkt
- 145 °C · 145 °C
- Dichte
- 0 · 0,838 g/cm3
- Brechungsindex
- 1.4247 · 1.4247
- Flammpunkt
- 25 °C · 25°C
- storage temp.
- 2 · 2-8°C, protect from light
- pka
- 10.93 · 10.93±0.70(Predicted)
- Aggregatzustand
- liquid
- Farbe
- colorless to light yellow
- Wichte
- 0.84 · 0.84
- InChI
- 1S/C6H19N3Si/c1-7(2)10(8(3)4)9(5)6/h10H,1-6H3
- InChIKey
- TWVSWDVJBJKDAA-UHFFFAOYSA-N
- SMILES
- CN(C)[SiH](N(C)C)N(C)C
- EPA chemische Informationen
- N,N,N',N',N'',N''-Hexamethylsilanetriamine (15112-89-7)
Sicherheit und Regulatorisches
Sicherheitsangaben dienen nur zur Orientierung und ersetzen weder das Sicherheitsdatenblatt (SDB) des Lieferanten noch geltende Vorschriften oder eine fachliche Bewertung.
GHS-Klassifizierung
GHS Classification
This chemical does not meet GHS hazard criteria for 5.8% (4 of 69) of reports.
Danger
H225 (56.5%): Highly Flammable liquid and vapor [Danger Flammable liquids]
P210, P223, P231+P232, P233, P240, P241, P242, P243, P260, P261, P262, P264, P270, P271, P280, P284, P301+P317, P301+P330+P331, P302+P335+P334, P302+P352, P302+P361+P354, P303+P361+P353, P304+P340, P305+P354+P338, P316, P320, P321, P330, P361+P364, P363, P370+P378, P402+P404, P403+P233, P403+P235, P405, and P501 (click each P-code to see the statement)
Aggregated GHS information provided per 69 reports by companies from 7 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.
Gefahrenhinweise
Regulatory InformationStatus: Active Update: 15-09-2022 https://echa.europa.eu/registration-dossier/-/registered-dossier/34209
Hazard Classes and CategoriesFlam. Liq. 2 (56.5%)
Sicherheitsdaten
- wgk
- 3
- tsca
- TSCA listed
- ridadr
- 1993
- RTECS-Nr.
- VV5800000
- risk_code
- 10-36/37/38-52/53-34-29-20-15-11
- Toxizität
- rabbit,LD50,skin,477mg/kg (477mg/kg),LIVER: OTHER CHANGESLUNGS, THORAX, OR RESPIRATION: CHRONIC PULMONARY EDEMA,Toxicology and Industrial Health. Vol. 5, Pg. 45, 1989.
- hazard_code
- F,C
- safety_code
- 16-26-36/37/39-45-43
Chemie und Industrie
Verwendung und Herstellung
General Manufacturing InformationSilanetriamine, N,N,N',N',N'',N''-hexamethyl-: ACTIVE
Anwendungen
VerwendenTris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.
Zugehörige Reaktionen
4
Notizen zur Verbindung
Wird geladen…