Chlorotrimethylsilane → HCID 178483697, Verbindung

HRID 2116846Notizen

Reaktionsgleichung

[CH3:1][N:2]([C:4]([N:7]([CH3:9])[CH3:8])(Cl)[Cl:5])[CH3:3].[F:10][C:11]([F:21])([F:20])[S:12]([O:15][Si](C)(C)C)(=[O:14])=[O:13].C[Si](C)(C)Cl.FC(F)(F)S(O)(=O)=O>>[F:10][C:11]([F:21])([F:20])[S:12]([O-:15])(=[O:14])=[O:13].[CH3:1][N:2]([C+:4]([N:7]([CH3:9])[CH3:8])[Cl:5])[CH3:3]

Komponenten

Edukt 4

HCID 6397Chlorotrimethylsilane

HCID 62406Trifluoromethanesulfonic acid

HCID 65367Trimethylsilyl triflate

HCID 125447451,1-Dichloro-N,N,N',N'-tetramethylmethanediamine

Produkt 1

HCID 178483697HCID 178483697, VerbindungAusbeute 98,7 %

Versuchsvorschrift

0.5 g (2.92 mmol) of bis(dimethylamino)dichloromethane are added at room temperature to 0.86 g (3.87 mmol) of trimethylsilyl trifluoromethanesulfonate, prepared by reaction of 0.42 g of trimethylchlorosilane with 0.58 g of trifluoromethanesulfonic acid at room temperature. The reaction mixture is stirred for 5 minutes, and all volatile products are subsequently removed under reduced pressure. The residue is dried under reduced pressure at 7 Pa and 50° C., giving 0.82 g of bis(dimethylamino)chlorocarbenium trifluoromethanesulfonate, corresponding to a yield of 98.7%.

Aufarbeitung

customall volatile products are subsequently removed under reduced pressure
customThe residue is dried under reduced pressure at 7 Pa and 50° C.

Quellen und Nachweise

ORD-Eintrag: ord-565c45c40dfb4e9c9cb3e7d8fc540983
Quelldatensatz: uspto-grants-2008_10
DOI: 10.6084/m9.figshare.5104873.v1
Patentnummer: US07439395B2

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