Carbon Dioxide → HCID 14766792, Verbindung

HRID 2174162Notizen

Reaktionsgleichung

Reaktionsgleichung von HRID 2174162
[CH2:1]([O:11][C:12]1[C:17]([F:18])=[C:16]([F:19])[CH:15]=[C:14]([F:20])[C:13]=1[F:21])[CH2:2][CH2:3][CH2:4][CH2:5][CH2:6][CH2:7][CH2:8][CH2:9][CH3:10].C([Li])CCC.CCCCCC.[C:33](=[O:35])=[O:34].Cl>C1COCC1>[CH2:1]([O:11][C:12]1[C:13]([F:21])=[C:14]([F:20])[C:15]([C:33]([OH:35])=[O:34])=[C:16]([F:19])[C:17]=1[F:18])[CH2:2][CH2:3][CH2:4][CH2:5][CH2:6][CH2:7][CH2:8][CH2:9][CH3:10]

Komponenten

6

Edukt 4

HCID 280Carbon DioxideHCID 313Hydrochloric AcidHCID 19980944HCID 19980944, VerbindungHCID 178418244HCID 178418244, Verbindung

Produkt 1

HCID 14766792HCID 14766792, Verbindung

Reagenzien, Katalysatoren, Lösungsmittel 1

HCID 8028TetrahydrofuranLösungsmittel

Reaktionsbedingungen

Temperatur
-78 °C

Versuchsvorschrift

36.8 g of the compound (10) dissolved in 250 mL of THF were cooled at −78° C. in an argon atmosphere; thereto were then dripped 100 mL of a 1.6 M/L n-butyllithium/hexane solution, with stirring for 2 hours at the same temperature. After addition of a suitable amount of crushed dry ice, the temperature was raised to room temperature, followed by stirring overnight. 200 mL of 3N hydrochloric acid were then added under ice cooling, the organic layer was separated, and the aqueous layer was extracted with diethyl ether. The organic layers were combined, were washed with saturated brine, and were then dried over anhydrous magnesium sulfate. After evaporating the solvent, the organic layer was recrystallized from hexane to yield 26.5 g (76 mmol) of 4-decyloxy-2,3,5,6-tetrafluorobenzoic acid (11).

Aufarbeitung

  1. temperaturethe temperature was raised to room temperature
  2. stirringby stirring overnight
  3. customthe organic layer was separated
  4. extractionthe aqueous layer was extracted with diethyl ether
  5. washwere washed with saturated brine
  6. dry with materialwere then dried over anhydrous magnesium sulfate
  7. customAfter evaporating the solvent
  8. customthe organic layer was recrystallized from hexane

Quellen und Nachweise

ORD-Eintrag
ord-5f8b88324cf943fa8e0241675b57ac02
Quelldatensatz
uspto-grants-2015_06
Patentnummer
US09059410B2

Notizen zur Reaktion

Wird geladen…